Impact of layout and profile optimization for inverse-mode SiGe HBT on SET and TID responses

• Published in: Microelectronics and reliability Vol. 105; p. 113561
• Main Authors: Wei, Jia-Nan, He, Chao-Hui, Li, Pei, Li, Yong-Hong, Guo, Hong-Xia
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.02.2020
• Subjects: Inverse-mode optimization; Silicon-germanium HBT; Single event transient; Total ionizing dose; Single event transient; Total ionizing dose; Silicon-germanium HBT; Inverse-mode optimization
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2019.113561

Layout and profile adjustments are presented based on TCAD simulation to improve the inverse-mode performances of silicon-germanium heterojunction bipolar transistor (SiGe HBT). Then the single event transient (SET) and total ionizing dose (TID) sensitivity of the optimized devices are investigated. The results indicate that profile optimizations result in better enhancement of the inverse-mode performances but also greater changes of the radiation responses. Most of all, the optimized Ge profile in base may lead to opposite impacts on SET and TID responses due to the change of local electric field in base caused by Ge grading. •Layout and profile optimizations for inverse-mode SiGe HBT are made using TCAD simulation.•Profile optimization has significant impact on inverse-mode radiation responses.•The local accelerating field induced by Ge grading has opposite impacts on SET and TID sensitivity.