Preparation of Sn-Ag-In ternary solder bumps by electroplating in sequence and reliability

This paper describes a technique that can obtain ternary Sn-Ag-In solder bumps with fine pitch and homogenous composition distribution.The main feature of this process is that tin-silver and indium are electroplated on copper under bump metallization（UBM） in sequence.After an accurate reflow process...

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Bibliographic Details
Published inJournal of semiconductors Vol. 32; no. 8; pp. 27 - 32
Main Author 王栋良 袁媛 罗乐
Format Journal Article
LanguageEnglish
Published 01.08.2011
Subjects
Copper
Electroplating
Indium
Intermetallic compounds
Semiconductors
Solders
Solidification
Tin
三元
制备
可靠性
序列
焊料凸点
电镀锡
金属间化合物
银
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Summary:This paper describes a technique that can obtain ternary Sn-Ag-In solder bumps with fine pitch and homogenous composition distribution.The main feature of this process is that tin-silver and indium are electroplated on copper under bump metallization（UBM） in sequence.After an accurate reflow process,Sn_（1.8）Ag_（9.4）In solder bumps are obtained.It is found that the intermetallic compounds（IMCs） between Sn-Ag-In solder and Cu grow with the reflow time,which results in an increase in Ag concentration in the solder area.So during solidification, more Ag_2In nucleates and strengthens the solder.
Bibliography:11-5781/TN
This paper describes a technique that can obtain ternary Sn-Ag-In solder bumps with fine pitch and homogenous composition distribution.The main feature of this process is that tin-silver and indium are electroplated on copper under bump metallization（UBM） in sequence.After an accurate reflow process,Sn_（1.8）Ag_（9.4）In solder bumps are obtained.It is found that the intermetallic compounds（IMCs） between Sn-Ag-In solder and Cu grow with the reflow time,which results in an increase in Ag concentration in the solder area.So during solidification, more Ag_2In nucleates and strengthens the solder.
Sn-Ag-In solder bumps; electroplating; microstructure; shear strength
Wang Dongliang~（1,2）,Yuan Yuan~1,and Luo Le~（1,＋） 1 State Key Laboratory of Transducer Technology,Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,Shanghai 200050,China 2 Graduate of University,Chinese Academy of Sciences,Beijing 100049,China
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/32/8/083005