Resistive switching characteristics of AgInZnS nanoparticles

Resistive random access memory has emerged as a promising next-generation non-volatile memory. AgInZnS (AIZS) semiconductor nanoparticles are demonstrated due to their large abundance, non-toxicity and the simplicity of synthesis. Herein, AIZS nanoparticles are synthesized as the switching layer in...

Full description

Saved in:
Bibliographic Details
Published inCeramics international Vol. 44; pp. S152 - S155
Main Authors Zhou, Dan, Chen, Fenggui, Han, Shuai, Hu, Wei, Zang, Zhigang, Hu, Zhiping, Li, Shiqi, Tang, Xiaosheng
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.11.2018
Subjects
AgInZnS
Resistive random access memory
Resistive switching
Semiconductor nanoparticles
Resistive random access memory
Semiconductor nanoparticles
AgInZnS
Resistive switching
Online AccessGet full text

Cover

More Information
Summary:Resistive random access memory has emerged as a promising next-generation non-volatile memory. AgInZnS (AIZS) semiconductor nanoparticles are demonstrated due to their large abundance, non-toxicity and the simplicity of synthesis. Herein, AIZS nanoparticles are synthesized as the switching layer in the sandwich structure of Al/AIZS/ITO via a hot-injection method and show excellent optical and electronic properties. By means of the electrical characterization, the memory device shows bipolar resistive switching behavior and exhibits the ON/OFF current ratio of about 18 with the good endurance performance over 75 cycles. This study reveals that the obtained AIZS nanoparticles have a great potential to be used in non-volatile resistive switching memory application.
ISSN:0272-8842
1873-3956
DOI:10.1016/j.ceramint.2018.08.126