Density behaviors of Ge nanodots self-assembled by ion beam sputtering deposition
Self-assembled Ge nanodots with areal number density up to 2.33× 1010 cm-2 and aspect ratio larger than 0.12 are prepared by ion beam sputtering deposition. The dot density, a function of deposition rate and Ge coverage, is observed to be limited mainly by the transformation from two-dimensional pre...
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| Published in | Chinese physics B Vol. 22; no. 5; pp. 557 - 563 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.05.2013
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/22/5/058104 |
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| Summary: | Self-assembled Ge nanodots with areal number density up to 2.33× 1010 cm-2 and aspect ratio larger than 0.12 are prepared by ion beam sputtering deposition. The dot density, a function of deposition rate and Ge coverage, is observed to be limited mainly by the transformation from two-dimensional precursors to three-dimensional islands, and to be associated with the adatom behaviors of attachment and detachment from the islands. An unusual increasing temperature dependence of nanodot density is also revealed when a high ion energy is employed in sputtering deposition, and is shown to be related to the breaking down of the superstrained wetting layer. This result is attributed to the interaction between energetic atoms and the growth surface, which mediates the island nucleation. |
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| Bibliography: | Xiong Fei, Yang Tao, Song Zhao-Ning, and Yang Pei-Zhi（ 1 Research Institute of Engineering and Technology, Yunnan University, Kunming 650091, China 2 Key Laboratory of Education Ministry for Advance Technique and Preparation of Renewable Energy Materials Yunnan Normal University, Kunming 650092, China 3 Department of Physics and Astronomy, University of Toledo, Toledo OH 43606, USA） Self-assembled Ge nanodots with areal number density up to 2.33× 1010 cm-2 and aspect ratio larger than 0.12 are prepared by ion beam sputtering deposition. The dot density, a function of deposition rate and Ge coverage, is observed to be limited mainly by the transformation from two-dimensional precursors to three-dimensional islands, and to be associated with the adatom behaviors of attachment and detachment from the islands. An unusual increasing temperature dependence of nanodot density is also revealed when a high ion energy is employed in sputtering deposition, and is shown to be related to the breaking down of the superstrained wetting layer. This result is attributed to the interaction between energetic atoms and the growth surface, which mediates the island nucleation. 11-5639/O4 Ge nanodot, self-organization, ion beam sputtering deposition, adatom behavior ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
| ISSN: | 1674-1056 2058-3834 1741-4199 |
| DOI: | 10.1088/1674-1056/22/5/058104 |