A complete and accurate surface-potential based large-signal model for compound semiconductor HEMTs

A complete and accurate surface potential based large-signal model for compound semiconductor HEMTs is presented. A surface potential equation resembling the one used in conventional MOSFET models is achieved. The analytic solutions from the traditional surface potential theory that developed in MOS...

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Bibliographic Details
Published inJournal of semiconductors Vol. 35; no. 3; pp. 70 - 78
Main Author 刘军 余志平 孙玲玲
Format Journal Article
LanguageEnglish
Published 01.03.2014
Subjects
Exact solutions
FET模型
Gallium arsenides
HEMT器件
High electron mobility transistors
Mathematical analysis
Mathematical models
MOSFET
MOSFETs
Semiconductor devices
Semiconductors
功率pHEMT
化合物半导体
大信号模型
表面电位
表面电势
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Summary:A complete and accurate surface potential based large-signal model for compound semiconductor HEMTs is presented. A surface potential equation resembling the one used in conventional MOSFET models is achieved. The analytic solutions from the traditional surface potential theory that developed in MOSFET models are inherited. For core model derivation, a novel method is used to realize a direct application of the standard surfacepotentialmodelofMOSFETsforHEMTmodeling,withoutbreakingthemathematicstructure.Thehigh-order derivatives of I–V /C–V remain continuous, making the model suitable for RF large-signal applications. Furthermore, the self-heating effects and the transconductance dispersion are also modelled. The model has been verified through comparison with measured DC IV, Gummel symmetry test, CV, minimum noise figure, small-signal Sparameters up to 66 GHz and single-tone input power sweep at 29 GHz for a 475 m0.1 m InGaAs/GaAs power pHEMT, fabricated at a commercial foundry.
Bibliography:A complete and accurate surface potential based large-signal model for compound semiconductor HEMTs is presented. A surface potential equation resembling the one used in conventional MOSFET models is achieved. The analytic solutions from the traditional surface potential theory that developed in MOSFET models are inherited. For core model derivation, a novel method is used to realize a direct application of the standard surfacepotentialmodelofMOSFETsforHEMTmodeling,withoutbreakingthemathematicstructure.Thehigh-order derivatives of I–V /C–V remain continuous, making the model suitable for RF large-signal applications. Furthermore, the self-heating effects and the transconductance dispersion are also modelled. The model has been verified through comparison with measured DC IV, Gummel symmetry test, CV, minimum noise figure, small-signal Sparameters up to 66 GHz and single-tone input power sweep at 29 GHz for a 475 m0.1 m InGaAs/GaAs power pHEMT, fabricated at a commercial foundry.
11-5781/TN
surface-potential based compound semiconductor HEMTs large-signal model
ObjectType-Article-1
SourceType-Scholarly Journals-1
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content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/35/3/034010