Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers
InGaN-based light-emitting diodes with p-GaN and p-A1GaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-A1GaN hole injection layers show superior optical and electrical performance, such as an incre...
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| Published in | Chinese physics B Vol. 21; no. 6; pp. 583 - 587 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.06.2012
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/21/6/068506 |
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| Abstract | InGaN-based light-emitting diodes with p-GaN and p-A1GaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-A1GaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-A1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency. |
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| AbstractList | InGaN-based light-emitting diodes with p-GaN and p-A1GaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-A1GaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-A1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency. InGaN-based light-emitting diodes with p-GaN and p-AlGaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-AlGaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-AlGaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency. |
| Author | 仵乐娟 李述体 刘超 王海龙 卢太平 张康 肖国伟 周玉刚 尹以安 杨孝东 |
| AuthorAffiliation | Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China APT Electronics Ltd, Nansha District, Guangzhou 511458, China |
| Author_xml | – sequence: 1 fullname: 仵乐娟 李述体 刘超 王海龙 卢太平 张康 肖国伟 周玉刚 尹以安 杨孝东 |
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| CitedBy_id | crossref_primary_10_1088_1674_1056_21_12_128504 crossref_primary_10_1016_j_micrna_2024_207872 crossref_primary_10_1016_j_optlastec_2024_110828 crossref_primary_10_1007_s11801_015_5065_3 crossref_primary_10_1088_1674_1056_22_8_088401 crossref_primary_10_1364_OE_469338 crossref_primary_10_1088_1674_1056_22_8_088504 crossref_primary_10_1088_1674_1056_22_6_068505 crossref_primary_10_1088_1361_6463_abdefc crossref_primary_10_7567_JJAP_52_06GE04 crossref_primary_10_1021_acsaelm_4c01711 crossref_primary_10_1088_1674_1056_21_11_118502 crossref_primary_10_1088_1674_1056_23_6_068502 crossref_primary_10_1016_j_optlastec_2024_112025 crossref_primary_10_1088_1674_1056_23_2_028502 crossref_primary_10_1088_1674_1056_22_5_058502 crossref_primary_10_1088_1674_1056_22_1_017801 crossref_primary_10_1088_1674_1056_22_7_078402 crossref_primary_10_1016_j_spmi_2015_10_027 crossref_primary_10_1088_1674_1056_22_10_108505 |
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| DocumentTitleAlternate | Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers |
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| Notes | GaN-based light-emitting diodes, hole injection layer, injection efficiency InGaN-based light-emitting diodes with p-GaN and p-A1GaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-A1GaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-A1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency. Wu Le-Juan, Li Shu-Ti, Liu Chao, Wang Hai-Long, Lu Tai-Ping, Zhang Kang, Xiao Guo-Wei, Zhou Yu-Gang,Zheng Shu-Wen, Yin Yi-An, and Yang Xiao-Dong（a） Institute of Opto-electronic l$faterials and Technology, South China Normal University, Guangzhou 510631, China b） APT Electronics Ltd, Nansha District, Ouangzhou 511458, China 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| Snippet | InGaN-based light-emitting diodes with p-GaN and p-A1GaN hole injection layers are numerically studied using the APSYS simulation software. The simulation... InGaN-based light-emitting diodes with p-GaN and p-AlGaN hole injection layers are numerically studied using the APSYS simulation software. The simulation... |
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| SubjectTerms | Bending Blocking Computer programs Computer simulation Electric power generation Indium gallium nitrides InGaN Light-emitting diodes p-GaN Quantum wells Software 仿真软件 发光二极管 多量子阱 注入层 空穴 蓝色 |
| Title | Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers |
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