Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

InGaN-based light-emitting diodes with p-GaN and p-A1GaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-A1GaN hole injection layers show superior optical and electrical performance, such as an incre...

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Published inChinese physics B Vol. 21; no. 6; pp. 583 - 587
Main Author 仵乐娟 李述体 刘超 王海龙 卢太平 张康 肖国伟 周玉刚 尹以安 杨孝东
Format Journal Article
LanguageEnglish
Published 01.06.2012
Subjects
Bending
Blocking
Computer programs
Computer simulation
Electric power generation
Indium gallium nitrides
InGaN
Light-emitting diodes
p-GaN
Quantum wells
Software
仿真软件
发光二极管
多量子阱
注入层
空穴
蓝色
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/21/6/068506

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Summary:InGaN-based light-emitting diodes with p-GaN and p-A1GaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-A1GaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-A1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.
Bibliography:GaN-based light-emitting diodes, hole injection layer, injection efficiency
InGaN-based light-emitting diodes with p-GaN and p-A1GaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-A1GaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-A1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.
Wu Le-Juan, Li Shu-Ti, Liu Chao, Wang Hai-Long, Lu Tai-Ping, Zhang Kang, Xiao Guo-Wei, Zhou Yu-Gang,Zheng Shu-Wen, Yin Yi-An, and Yang Xiao-Dong（a） Institute of Opto-electronic l$faterials and Technology, South China Normal University, Guangzhou 510631, China b） APT Electronics Ltd, Nansha District, Ouangzhou 511458, China
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/6/068506