Synthesis of ZrSiN composite films using a plasma focus device

• Published in: Chinese physics B Vol. 23; no. 6; pp. 381 - 386
• Main Authors: Ahmad, R., Hussain, T., Khan, I. A., Rawat, R. S.
• Format: Journal Article
• Language: English
• Published: 01.06.2014
• Subjects: Crystallites; Devices; Formations; Plasma focus; Scanning electron microscopy; Shot; SiN薄膜; X-ray diffraction; XRD图谱; Zirconium; 合成; 复合薄膜; 扫描电子显微镜; 等离子体焦点; 等离子体聚焦; 装置
• ISSN: 1674-1056; 2058-3834; 1741-4199
• DOI: 10.1088/1674-1056/23/6/065204

ZrSiN thin films are synthesized by using plasma focus through various numbers of focus shots （10, 20, and 30）, with samples placed at 9 cm away from the tip of the anode. Crystal structures, surface morphologies, and elemental compositions of ZrSiN films are characterized by an X-ray diffractometer （XRD） and scanning electron microscope （SEM） attached with energy dispersive X-ray spectroscopy （EDS）. XRD patterns confirm the formations of polycrystalline ZrSiN films. Crystallinity of nitride increases with the increase of focus shot number. The average crystallite size of zirconium nitride increases from 27 ± 3 nm to 73±8 nm and microstrain decreases from 2.28 to 1.0 with the increase of the focus shot number. SEM results exhibit the formations of granular and oval-shaped microstructures, depending on the number of focus shots. EDS results confirm the presences of silicon, zirconium, nitrogen, and oxygen in the composite films. The content values of Zr and N in the composite films increase with the increase of the focus shot number.