Electromechanical field effect transistors based on multilayer phosphorene nanoribbons

• Published in: Physics letters. A Vol. 381; no. 23; pp. 1962 - 1966
• Main Authors: Jiang, Z.T., Lv, Z.T., Zhang, X.D.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 21.06.2017
• Subjects: Electromechanical effects; Electron states; Field effect transistors; Electromechanical effects; Electron states; Field effect transistors
• ISSN: 0375-9601; 1873-2429
• DOI: 10.1016/j.physleta.2017.04.008

Based on the tight-binding Hamiltonian approach, we demonstrate that the electromechanical field effect transistors (FETs) can be realized by using the multilayer phosphorene nanoribbons (PNRs). The synergistic combination of the electric field and the external strains can establish the on–off switching since the electric field can shift or split the energy band, and the mechanical strains can widen or narrow the band widths. This kind of multilayer PNR FETs, much solider than the monolayer PNR one and more easily biased by different electric fields, has more transport channels consequently leading to the higher on–off current ratio or the higher sensitivity to the electric fields. Meanwhile, the strain-induced band-flattening will be beneficial for improving the flexibility in designing the electromechanical FETs. In addition, such electromechanical FETs can act as strain-controlled FETs or mechanical detectors for detecting the strains, indicating their potential applications in nano- and micro-electromechanical fields. •Electromechanical transistors are designed with multilayer phosphorene nanoribbons.•Electromechanical synergistic effect can establish the on–off switching more flexibly.•Multilayer transistors, solider and more easily biased, has more transport channels.•Electromechanical transistors can act as strain-controlled transistors or mechanical detectors.