A broadband regenerative frequency divider in InGaP/GaAs HBT technology

• Published in: Journal of semiconductors Vol. 35; no. 7; pp. 139 - 142
• Main Author: 张金灿 张玉明 吕红亮 张义门 刘敏 钟英辉 师政
• Format: Journal Article
• Language: English
• Published: 01.07.2014
• Subjects: Dividers; Frequency dividers; GaAs; Gallium arsenide; Gallium arsenides; InGaP; Regenerative; Resistors; Semiconductor devices; Semiconductors; 再生; 分频器; 宽带; 异质结双极晶体管; 技术; 有源负载

A dynamic divide-by-two regenerative GaP/GaAs heterojunction bipolar transistors （HBTs） frequency divider （RFD） is presented in a 60-GHz-fT Intechnology. To achieve high operation bandwidth, active loads instead of resistor loads are incorporated into the RFD. On-wafer measurement shows that the div...