A broadband regenerative frequency divider in InGaP/GaAs HBT technology

A dynamic divide-by-two regenerative GaP/GaAs heterojunction bipolar transistors （HBTs） frequency divider （RFD） is presented in a 60-GHz-fT Intechnology. To achieve high operation bandwidth, active loads instead of resistor loads are incorporated into the RFD. On-wafer measurement shows that the div...

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Published inJournal of semiconductors Vol. 35; no. 7; pp. 139 - 142
Main Author 张金灿 张玉明 吕红亮 张义门 刘敏 钟英辉 师政
Format Journal Article
LanguageEnglish
Published 01.07.2014
Subjects
Dividers
Frequency dividers
GaAs
Gallium arsenide
Gallium arsenides
InGaP
Regenerative
Resistors
Semiconductor devices
Semiconductors
再生
分频器
宽带
异质结双极晶体管
技术
有源负载
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Summary:A dynamic divide-by-two regenerative GaP/GaAs heterojunction bipolar transistors （HBTs） frequency divider （RFD） is presented in a 60-GHz-fT Intechnology. To achieve high operation bandwidth, active loads instead of resistor loads are incorporated into the RFD. On-wafer measurement shows that the divider is operating from 10 GHz up to at least 40 GHz, limited by the available input frequency. The maximum operation frequency of the divider is found to be much higher than fT/2 of the transistor, and also the divider has excellent input sensitivity. The divider consumes 300.85 mW from 5 V supply and occupies an area of 0.47 × 0.22 mm^2.
Bibliography:regenerative frequency divider; InGaP/GaAs HBT; active loads; broadband
A dynamic divide-by-two regenerative GaP/GaAs heterojunction bipolar transistors （HBTs） frequency divider （RFD） is presented in a 60-GHz-fT Intechnology. To achieve high operation bandwidth, active loads instead of resistor loads are incorporated into the RFD. On-wafer measurement shows that the divider is operating from 10 GHz up to at least 40 GHz, limited by the available input frequency. The maximum operation frequency of the divider is found to be much higher than fT/2 of the transistor, and also the divider has excellent input sensitivity. The divider consumes 300.85 mW from 5 V supply and occupies an area of 0.47 × 0.22 mm^2.
Zhang Jincan, Zhang Yuming, Lue Hongliang, Zhang Yimen, Liu Min, Zhong Yinghui, Shi Zheng（ School ofMicroelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi＇an 710071, China）
11-5781/TN
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/35/7/075004