Spin-Wave Modes in Exchange-Coupled FePt/FeNi Bilayer Films

A simple magnetic modulation structure of the exchange-coupling FePt/FeNi bilayer film is fabricated and studied for its magnetization dynamics using time-resolved magneto-optical polar Kerr spectroscopy. It is found that two spin-wave modes can be excited. One is fixed at -3.2 GHz in frequency for...

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Published inChinese physics letters Vol. 31; no. 1; pp. 165 - 169
Main Author 李树发 何攀 程樗元 周仕明 赖天树
Format Journal Article
LanguageEnglish
Published 2014
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Summary:A simple magnetic modulation structure of the exchange-coupling FePt/FeNi bilayer film is fabricated and studied for its magnetization dynamics using time-resolved magneto-optical polar Kerr spectroscopy. It is found that two spin-wave modes can be excited. One is fixed at -3.2 GHz in frequency for any external field and may serve as a frequency-stabilized spin-wave filter, while the other is external field dependent. In contrast, only the external field-dependent mode is excited in single-layer FeNi, supporting the localized origin of the mode at -3.2 GHz, which is confined to a thin exchange-coupling region. The other external field-dependent mode in frequency is attributed to the Kittel mode.
Bibliography:A simple magnetic modulation structure of the exchange-coupling FePt/FeNi bilayer film is fabricated and studied for its magnetization dynamics using time-resolved magneto-optical polar Kerr spectroscopy. It is found that two spin-wave modes can be excited. One is fixed at -3.2 GHz in frequency for any external field and may serve as a frequency-stabilized spin-wave filter, while the other is external field dependent. In contrast, only the external field-dependent mode is excited in single-layer FeNi, supporting the localized origin of the mode at -3.2 GHz, which is confined to a thin exchange-coupling region. The other external field-dependent mode in frequency is attributed to the Kittel mode.
11-1959/O4
LI Shu-Fa, HE Pan, CHENG Chu-Yuan, ZHOU Shi-Ming, LAI Tian-Shu( 1State-Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering Sun Yat-Sen University, Guangzhou 510275 ~ Department of Physics, TonKji University, Shanghai 200092)
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/31/1/017502