Analysis of GIDL Erase Characteristics in Vertical NAND Flash Memory

• Published in: Journal of semiconductor technology and science Vol. 23; no. 3; pp. 196 - 201
• Main Authors: Yoo, Ho-Nam, Yang, Yeongheon, Park, Min-Kyu, Choi, Woo-Young, Lee, Jong-Ho
• Format: Journal Article
• Language: English
• Published: 대한전자공학회 01.06.2023
• Subjects: 전기공학; gate-induced drain leakage (GIDL); Vertical NAND flash memory; erase operation

The erase characteristics of VNAND flash memory cells depending on gate-induced drain leakage (GIDL) conditions are analyzed through device simulation. It is revealed that the measurement and simulation results show similar trends for the Vth change after the erase operation depending on the GIDL co...