Analysis of GIDL Erase Characteristics in Vertical NAND Flash Memory

The erase characteristics of VNAND flash memory cells depending on gate-induced drain leakage (GIDL) conditions are analyzed through device simulation. It is revealed that the measurement and simulation results show similar trends for the Vth change after the erase operation depending on the GIDL co...

Full description

Saved in:
Bibliographic Details
Published inJournal of semiconductor technology and science Vol. 23; no. 3; pp. 196 - 201
Main Authors Yoo, Ho-Nam, Yang, Yeongheon, Park, Min-Kyu, Choi, Woo-Young, Lee, Jong-Ho
Format Journal Article
LanguageEnglish
Published 대한전자공학회 01.06.2023
Subjects
전기공학
gate-induced drain leakage (GIDL)
Vertical NAND flash memory
erase operation
Online AccessGet full text

Cover

More Information
Summary:The erase characteristics of VNAND flash memory cells depending on gate-induced drain leakage (GIDL) conditions are analyzed through device simulation. It is revealed that the measurement and simulation results show similar trends for the Vth change after the erase operation depending on the GIDL condition. The channel potential and the amount of GIDL generation during the erase operation are investigated in terms of Vth change. An erase operation with GIDL has a 10 times larger Vth change than an erase operation without GIDL. In addition, the operation of reducing only the Vth of the selected cell in VNAND flash memory is verified by adjusting GIDL conditions. KCI Citation Count: 0
ISSN:1598-1657
2233-4866
2233-4866
1598-1657
DOI:10.5573/JSTS.2023.23.3.196