Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods

Near-ultraviolet （UV） InGaN/AIGaN light-emitting diodes （LEDs） are grown by low-pressure metal-organic chemical vapor deposition. The scanning electronic microscope image shows that the p-OaN micro-rods are formed above the interface of p-A1GaN//p-OaN due to the rapid growth rate of p-OaN in the ver...

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Bibliographic Details
Published inChinese physics letters Vol. 31; no. 2; pp. 97 - 100
Main Author 王东盛 张克雄 梁红伟 宋世巍 杨德超 申人升 柳阳 夏晓川 骆英民 杜国同
Format Journal Article
LanguageEnglish
Published 01.02.2014
Subjects
AlGaN
Chemical vapor deposition
Electroluminescence
Electronics
Indium gallium nitrides
InGaN
LED灯
Light-emitting diodes
Microscopes
Photons
Scanning
扫描电子显微镜
紫外发光二极管
输出功率
金属有机物化学气相沉积
Online AccessGet full text
ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/31/2/027101

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Summary:Near-ultraviolet （UV） InGaN/AIGaN light-emitting diodes （LEDs） are grown by low-pressure metal-organic chemical vapor deposition. The scanning electronic microscope image shows that the p-OaN micro-rods are formed above the interface of p-A1GaN//p-OaN due to the rapid growth rate of p-OaN in the vertical direction. The p-OaN micro-rods greatly increase the escape probability of photons inside the LED structure. Electrolumi- nescence intensities of the 372nm UV LED lamps with p-OaN micro rods are 88% higher than those of the i/at surface LED samples.
Bibliography:11-1959/O4
WANG Dong-Sheng, ZHANG Ke-Xiong, LIANG Hong-Wei, SONG Shi-Wei, YANG De-Chao, SHEN aen-Sheng, LIU Yang, XIA Xiao-Chuan, LUO Ying-Min, DU Guo-Tong （1 School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024 2State Key Laboratory of Fhnctional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 3State Key Laboratory on Integrated Optoelectronics, School of Electronic Science and Engineering, Jilin University, Changchun 130012）
Near-ultraviolet （UV） InGaN/AIGaN light-emitting diodes （LEDs） are grown by low-pressure metal-organic chemical vapor deposition. The scanning electronic microscope image shows that the p-OaN micro-rods are formed above the interface of p-A1GaN//p-OaN due to the rapid growth rate of p-OaN in the vertical direction. The p-OaN micro-rods greatly increase the escape probability of photons inside the LED structure. Electrolumi- nescence intensities of the 372nm UV LED lamps with p-OaN micro rods are 88% higher than those of the i/at surface LED samples.
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/31/2/027101