Lattice structures and electronic properties of CIGS/CdS interface: First-principles calculations
Using first-principles calculations within density functional theory, we study the atomic structures and electronic properties of the perfect and defective (2VCu+ Incu) CulnGaSe2/CdS interfaces theoretically, especially the interface states. We find that the local lattice structure of (2VCu+ InCu) i...
Saved in:
Published in | Chinese physics B Vol. 23; no. 7; pp. 661 - 666 |
---|---|
Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.07.2014
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Using first-principles calculations within density functional theory, we study the atomic structures and electronic properties of the perfect and defective (2VCu+ Incu) CulnGaSe2/CdS interfaces theoretically, especially the interface states. We find that the local lattice structure of (2VCu+ InCu) interface is somewhat disorganized. By analyzing the local density of states projected on several atomic layers of the two interfaces models, we find that for the (2VCu+InCu) interface the interface states near the Fermi level in CulnGaSe2 and CdS band gap regions are mainly composed of interracial Se-4p, Cu-3d and S-3p orbitals, while for the perfect interface there are no clear interface states in the CulnGaSe2 region but only some interface states which are mainly composed of S-3p orbitals in the valance band of CdS region. |
---|---|
Bibliography: | Using first-principles calculations within density functional theory, we study the atomic structures and electronic properties of the perfect and defective (2VCu+ Incu) CulnGaSe2/CdS interfaces theoretically, especially the interface states. We find that the local lattice structure of (2VCu+ InCu) interface is somewhat disorganized. By analyzing the local density of states projected on several atomic layers of the two interfaces models, we find that for the (2VCu+InCu) interface the interface states near the Fermi level in CulnGaSe2 and CdS band gap regions are mainly composed of interracial Se-4p, Cu-3d and S-3p orbitals, while for the perfect interface there are no clear interface states in the CulnGaSe2 region but only some interface states which are mainly composed of S-3p orbitals in the valance band of CdS region. 11-5639/O4 first-principles calculation, CulnGaSe2/CdS, density of states, interface states ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1674-1056 2058-3834 1741-4199 |
DOI: | 10.1088/1674-1056/23/7/077301 |