Lattice structures and electronic properties of CIGS/CdS interface: First-principles calculations

Using first-principles calculations within density functional theory, we study the atomic structures and electronic properties of the perfect and defective (2VCu+ Incu) CulnGaSe2/CdS interfaces theoretically, especially the interface states. We find that the local lattice structure of (2VCu+ InCu) i...

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Published inChinese physics B Vol. 23; no. 7; pp. 661 - 666
Main Authors Tang, Fu-Ling, Liu, Ran, Xue, Hong-Tao, Lu, Wen-Jiang, Feng, Yu-Dong, Rui, Zhi-Yuan, Huang, Min
Format Journal Article
LanguageEnglish
Published 01.07.2014
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Summary:Using first-principles calculations within density functional theory, we study the atomic structures and electronic properties of the perfect and defective (2VCu+ Incu) CulnGaSe2/CdS interfaces theoretically, especially the interface states. We find that the local lattice structure of (2VCu+ InCu) interface is somewhat disorganized. By analyzing the local density of states projected on several atomic layers of the two interfaces models, we find that for the (2VCu+InCu) interface the interface states near the Fermi level in CulnGaSe2 and CdS band gap regions are mainly composed of interracial Se-4p, Cu-3d and S-3p orbitals, while for the perfect interface there are no clear interface states in the CulnGaSe2 region but only some interface states which are mainly composed of S-3p orbitals in the valance band of CdS region.
Bibliography:Using first-principles calculations within density functional theory, we study the atomic structures and electronic properties of the perfect and defective (2VCu+ Incu) CulnGaSe2/CdS interfaces theoretically, especially the interface states. We find that the local lattice structure of (2VCu+ InCu) interface is somewhat disorganized. By analyzing the local density of states projected on several atomic layers of the two interfaces models, we find that for the (2VCu+InCu) interface the interface states near the Fermi level in CulnGaSe2 and CdS band gap regions are mainly composed of interracial Se-4p, Cu-3d and S-3p orbitals, while for the perfect interface there are no clear interface states in the CulnGaSe2 region but only some interface states which are mainly composed of S-3p orbitals in the valance band of CdS region.
11-5639/O4
first-principles calculation, CulnGaSe2/CdS, density of states, interface states
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/23/7/077301