A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pitch
A high voltage（〉 600 V） integrable silicon-on-insulator（SOI） trench-type lateral insulated gate bipolar transistor（LIGBT） with a reduced cell-pitch is proposed.The LIGBT features multiple trenches（MTs）：two oxide trenches in the drift region and a trench gate extended to the buried oxide（BOX）.Firstly...
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| Published in | Chinese physics B Vol. 22; no. 2; pp. 429 - 433 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.02.2013
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/22/2/027303 |
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| Summary: | A high voltage（〉 600 V） integrable silicon-on-insulator（SOI） trench-type lateral insulated gate bipolar transistor（LIGBT） with a reduced cell-pitch is proposed.The LIGBT features multiple trenches（MTs）：two oxide trenches in the drift region and a trench gate extended to the buried oxide（BOX）.Firstly,the oxide trenches enhance electric field strength because of the lower permittivity of oxide than that of Si.Secondly,oxide trenches bring in multi-directional depletion,leading to a reshaped electric field distribution and an enhanced reduced-surface electric-field（RESURF） effect.Both increase the breakdown voltage（BV）.Thirdly,oxide trenches fold the drift region around the oxide trenches,leading to a reduced cell-pitch.Finally,the oxide trenches enhance the conductivity modulation,resulting in a high electron/hole concentration in the drift region as well as a low forward voltage drop（Von）.The oxide trenches cause a low anode-cathode capacitance,which increases the switching speed and reduces the turn-off energy loss（Eoff）.The MT SOI LIGBT exhibits a BV of 603 V at a small cell-pitch of 24 μm,a Von of 1.03 V at 100 A/cm-2,a turn-off time of 250 ns and Eoff of 4.1×10？3 mJ.The trench gate extended to BOX synchronously acts as dielectric isolation between high voltage LIGBT and low voltage circuits,simplifying the fabrication processes. |
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| Bibliography: | A high voltage（〉 600 V） integrable silicon-on-insulator（SOI） trench-type lateral insulated gate bipolar transistor（LIGBT） with a reduced cell-pitch is proposed.The LIGBT features multiple trenches（MTs）：two oxide trenches in the drift region and a trench gate extended to the buried oxide（BOX）.Firstly,the oxide trenches enhance electric field strength because of the lower permittivity of oxide than that of Si.Secondly,oxide trenches bring in multi-directional depletion,leading to a reshaped electric field distribution and an enhanced reduced-surface electric-field（RESURF） effect.Both increase the breakdown voltage（BV）.Thirdly,oxide trenches fold the drift region around the oxide trenches,leading to a reduced cell-pitch.Finally,the oxide trenches enhance the conductivity modulation,resulting in a high electron/hole concentration in the drift region as well as a low forward voltage drop（Von）.The oxide trenches cause a low anode-cathode capacitance,which increases the switching speed and reduces the turn-off energy loss（Eoff）.The MT SOI LIGBT exhibits a BV of 603 V at a small cell-pitch of 24 μm,a Von of 1.03 V at 100 A/cm-2,a turn-off time of 250 ns and Eoff of 4.1×10？3 mJ.The trench gate extended to BOX synchronously acts as dielectric isolation between high voltage LIGBT and low voltage circuits,simplifying the fabrication processes. Luo Xiao-Rong, Wang Qi , Yao Guo-Liang , Wang Yuan-Gang , Lei Yian-Fei , Wang Pei , Jiang Yong-Heng, Zhou Kun, Zhang Bo（State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China） silicon-on-insulator,lateral insulated gate bipolar transistor,conductivity modulation,breakdown voltage,trench 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
| ISSN: | 1674-1056 2058-3834 1741-4199 |
| DOI: | 10.1088/1674-1056/22/2/027303 |