1.4 kV 4H-SiC PiN diode with a robust non-uniform floating guard ring termination

This paper presents the design and fabrication of an effective, robust and process-tolerant floating guard ring termination on high voltage 4H-SiC PiN diodes. Different design factors were studied by numerical simulations and evaluated by device fabrication and measurement. The device fabrication wa...

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Bibliographic Details
Published inJournal of semiconductors Vol. 35; no. 5; pp. 32 - 35
Main Author 陈思哲 盛况 王珏
Format Journal Article
LanguageEnglish
Published 01.05.2014
Subjects
4H-SiC
Breakdown
Devices
Electric potential
Floating structures
Guards
PIN diodes
PIN二极管
Semiconductors
Voltage
保护环
击穿电压值
浮动
终端结构
设备制造
非均匀
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Summary:This paper presents the design and fabrication of an effective, robust and process-tolerant floating guard ring termination on high voltage 4H-SiC PiN diodes. Different design factors were studied by numerical simulations and evaluated by device fabrication and measurement. The device fabrication was based on a 12 μm thick drift layer with an N-type doping concentration of 8 × 10^15 cm^-3. P^＋ regions in the termination structure and anode layer were formed by multiple aluminum implantations. The fabricated devices present a highest breakdown voltage of 1.4 kV, which is higher than the simulated value. For the fabricated 15 diodes in one chip, all of them exceeded the breakdown voltage of 1 kV and six of them reached the desired breakdown value of 1.2 kV.
Bibliography:silicon carbide; PiN diode; field guarding rings; edge termination
This paper presents the design and fabrication of an effective, robust and process-tolerant floating guard ring termination on high voltage 4H-SiC PiN diodes. Different design factors were studied by numerical simulations and evaluated by device fabrication and measurement. The device fabrication was based on a 12 μm thick drift layer with an N-type doping concentration of 8 × 10^15 cm^-3. P^＋ regions in the termination structure and anode layer were formed by multiple aluminum implantations. The fabricated devices present a highest breakdown voltage of 1.4 kV, which is higher than the simulated value. For the fabricated 15 diodes in one chip, all of them exceeded the breakdown voltage of 1 kV and six of them reached the desired breakdown value of 1.2 kV.
11-5781/TN
Chen Sizhe, Sheng Kuang, Wang Jue（1 College of Electrical Engineering, Zhejiang University, Hangzhou 310007, China ;2Intersil Corp., Hangzhou 310027, China）
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/35/5/054003