The effects of ion irradiation on porous silicon photoluminescence

The effects of ion irradiation on porous Si (po-Si) photoluminescence (PL) are investigated to gain insight into the emission mechanism. Po-Si was obtained by standard electrochemical etching of p -doped Si(100) and the samples were aged for several weeks to achieve stability of the PL intensity. Sp...

Full description

Saved in:
Bibliographic Details
Published inJournal of applied physics Vol. 97; no. 3; pp. 033528 - 033528-5
Main Authors Jacobsohn, L. G., Bennett, B. L., Cooke, D. W., Muenchausen, R. E., Nastasi, M.
Format Journal Article
LanguageEnglish
Published United States American Institute of Physics 01.02.2005
Subjects
AIR
AMORPHOUS STATE
ATOMIC DISPLACEMENTS
DOPED MATERIALS
ERRORS
ETCHING
HELIUM IONS
HYDROGEN IONS 1 PLUS
ION BEAMS
IRRADIATION
MATERIALS SCIENCE
NANOSTRUCTURES
NEON IONS
OXIDATION
PHOTOLUMINESCENCE
POROUS MATERIALS
QUENCH AGING
RECOMBINATION
SEMICONDUCTOR MATERIALS
SILICON
SURFACES
Online AccessGet full text

Cover

More Information
Summary:The effects of ion irradiation on porous Si (po-Si) photoluminescence (PL) are investigated to gain insight into the emission mechanism. Po-Si was obtained by standard electrochemical etching of p -doped Si(100) and the samples were aged for several weeks to achieve stability of the PL intensity. Specimens were progressively irradiated with H + , He + , or Ne + + ions followed by PL measurements. PL spectra were obtained as a function of the displacement per atom (DPA) parameter up to a DPA level of ∼ 10 − 2 , which was sufficient to nearly extinguish PL. The quenching behavior showed a strong dependence on the chemical nature of the implanted species. Within experimental error, the quenching efficiency was equivalent for He + and Ne + + irradiations, but was considerably higher for H + irradiation. Channeling spectrometry showed the efficiency to be correlated with the self-recovery of defects generated during irradiation. The observed PL quenching is associated with the creation of nonradiative recombination sites within the band gap, but not with Si nanostructure amorphization and∕or surface oxygen removal. Significant recovery of quenched PL occurs over a period of 120 days for specimens that are stored in air, but not for samples that are stored in vacuum. These results demonstrate the importance and complexity of surface oxidation on the po-Si luminescence mechanism.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1849434