Thermal analysis of GaN laser diodes in a package structure
Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for b...
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| Published in | Chinese physics B Vol. 21; no. 8; pp. 264 - 269 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.08.2012
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/21/8/084209 |
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| Abstract | Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials. |
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| AbstractList | Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials. |
| Author | 冯美鑫 张书明 江德生 刘建平 王辉 曾畅 李增成 王怀兵 王峰 杨辉 |
| AuthorAffiliation | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China |
| Author_xml | – sequence: 1 fullname: 冯美鑫 张书明 江德生 刘建平 王辉 曾畅 李增成 王怀兵 王峰 杨辉 |
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| CitedBy_id | crossref_primary_10_1021_acsphotonics_2c01046 crossref_primary_10_1088_1742_6596_687_1_012052 crossref_primary_10_4236_opj_2018_83005 crossref_primary_10_7498_aps_63_074203 crossref_primary_10_1088_0256_307X_30_10_104205 crossref_primary_10_3807_KJOP_2016_27_6_218 crossref_primary_10_1063_1_4816598 crossref_primary_10_3788_CJL221277 crossref_primary_10_1109_TCPMT_2015_2408374 crossref_primary_10_1109_JSTQE_2014_2372051 crossref_primary_10_1088_1674_1056_22_3_034203 |
| Cites_doi | 10.1063/1.117816 10.1002/pssc.200565170 10.1063/1.3493117 10.1088/0268-1242/20/6/015 10.1063/1.118593 10.1143/JJAP.38.2764 10.1002/pssc.200983498 10.1063/1.2344812 10.1088/1674-1056/19/12/124211 10.1063/1.118300 10.1016/j.tca.2006.11.019 10.1117/12.764676 10.1063/1.116830 10.1002/pssc.200674800 10.1063/1.2037201 |
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| DocumentTitleAlternate | Thermal analysis of GaN laser diodes in a package structure |
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| Notes | Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials. 11-5639/O4 laser diodes, thermal, GaN ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| Snippet | Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration... |
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| StartPage | 264 |
| SubjectTerms | Aluminum nitride Devices Finite element method Gallium nitrides GaN Laser diodes Materials selection Mathematical analysis Packages Thermal analysis 包装材料 参数选择 封装结构 有限元素法 激光二极管 热分析 配置 |
| Title | Thermal analysis of GaN laser diodes in a package structure |
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