Thermal analysis of GaN laser diodes in a package structure

Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for b...

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Bibliographic Details
Published inChinese physics B Vol. 21; no. 8; pp. 264 - 269
Main Author 冯美鑫 张书明 江德生 刘建平 王辉 曾畅 李增成 王怀兵 王峰 杨辉
Format Journal Article
LanguageEnglish
Published 01.08.2012
Subjects
Aluminum nitride
Devices
Finite element method
Gallium nitrides
GaN
Laser diodes
Materials selection
Mathematical analysis
Packages
Thermal analysis
包装材料
参数选择
封装结构
有限元素法
激光二极管
热分析
配置
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/21/8/084209

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Summary:Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials.
Bibliography:Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials.
11-5639/O4
laser diodes, thermal, GaN
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/8/084209