Compact Modeling of a HfO₂ Memristor Cell with Dependence on Compliance Current for Large-area Simulations

As a next-generation memory, resistive random-access memory (ReRAM) is an emerging memory device owing to its high cell scalability suitable to high-density memory array, data nonvolatility, and high operation speeds. A compact model of an ReRAM with HfO2 as the switching layer material is developed...

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Bibliographic Details
Published inJournal of semiconductor technology and science Vol. 23; no. 6; pp. 382 - 388
Main Authors Joshi, Saurabh Suredra, Kim, Soomin, Kim, Chang-Hyun, Cho, Seongjae
Format Journal Article
LanguageEnglish
Published 대한전자공학회 01.12.2023
Subjects
전기공학
hafnium dioxide
Resistive-switching random-access memory(ReRAM)
compact model
circuit and system simulation
multi-level conductance
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Summary:As a next-generation memory, resistive random-access memory (ReRAM) is an emerging memory device owing to its high cell scalability suitable to high-density memory array, data nonvolatility, and high operation speeds. A compact model of an ReRAM with HfO2 as the switching layer material is developed for circuit and system-level simulations in this work. The developed model enables higher level simulation tasks not only for the memory cell operations in the highly packed array and but also for describing the synaptic behaviors in the hardware neuromorphic systems. Inherently dynamic cell operation characteristics and cell-to-cell variability are reflected for more accurate higher-level simulations. The model is validated by the device characteristics experimentally obtained in the existing reports. The representation of multi-level conductance values by controlling the compliance current has been fused into the compact model. KCI Citation Count: 0
ISSN:1598-1657
2233-4866
2233-4866
1598-1657
DOI:10.5573/JSTS.2023.23.6.382