Electronic carrier mobilities of BaTiO3
Electronic carrier mobilities of a mixed conductor oxide are one of the most difficult parameters to characterize. A most direct way may be to measure the Hall effect in combination with electronic conductivity, but measurement of the Hall effect in situ at elevated temperatures is never trivial. Th...
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Published in | Journal of the European Ceramic Society Vol. 24; no. 6; pp. 1259 - 1263 |
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Main Authors | , , |
Format | Conference Proceeding Journal Article |
Language | English |
Published |
Oxford
Elsevier
2004
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Subjects | |
Online Access | Get full text |
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Summary: | Electronic carrier mobilities of a mixed conductor oxide are one of the most difficult parameters to characterize. A most direct way may be to measure the Hall effect in combination with electronic conductivity, but measurement of the Hall effect in situ at elevated temperatures is never trivial. Thermopower is often employed in association with the conductivity, but the lack of knowledge of the effective densities-of-states and heats-of-transport of the carriers often renders the result unreliable, too. The mobilities of electronic carriers of BaTiO3 thus remain not so well known except for a few estimates of them. Recently, we have evaluated the mobilities of electrons (*mn) and holes (*mp) over the temperature range 800-1100NBDGC by measuring electrical conductivity and chemical diffusivity on undoped and 1.8 m/o Al-doped BaTiO3, respectively, in their mixed n /p regimes. It has been found that for the undoped, *mn=0.13 and *mp=0.08 cm2/V-s and for the Al-doped, *mn=0.08 and *mp=1.99103exp(-1.14eV/kT) cm2/V-s over the temperature range examined. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0955-2219 1873-619X |
DOI: | 10.1016/S0955-2219(03)00504-1 |