Superinjection in diamond homojunction P-I-N diodes

Diamond and many newly emerged wide bandgap semiconductor materials show outstanding optical and magnetic properties. However, they cannot be as efficiently doped as silicon or gallium arsenide, which limits their practical applicability. Here, we theoretically predict a superinjection effect in dia...

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Bibliographic Details
Published inSemiconductor science and technology Vol. 34; no. 3; pp. 3 - 8
Main Authors Khramtsov, Igor A, Fedyanin, Dmitry Yu
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.03.2019
Subjects
diamond diodes
light-emitting devices
superinjection
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Summary:Diamond and many newly emerged wide bandgap semiconductor materials show outstanding optical and magnetic properties. However, they cannot be as efficiently doped as silicon or gallium arsenide, which limits their practical applicability. Here, we theoretically predict a superinjection effect in diamond p-i-n diodes, which allows for the injection of orders of magnitude more electrons into the i-region of the diode than doping of the n-type injection layer allows. Moreover, we show that the efficiency of electron injection can be further improved using an i-p grating implemented in the i-region of the diode. The predicted superinjection effect enables us to overcome fundamental limitations related to the high activation energy of donors in diamond and provides the opportunity to design high-performance devices.
Bibliography:SST-105314.R1
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/ab0569