Growth and characterization of straight InAs/GaAs nanowire heterostructures on Si substrate

Vertical InAs/GaAs nanowire （NW） heterostructures with a straight InAs segment have been successfully fabricated on Si （111） substrate by using AlGaAs/GaAs buffer layers coupled with a composition grading InGaAs segment. Both the GaAs and InAs segments are not limited by the misfit strain induced cr...

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Published inChinese physics B Vol. 22; no. 7; pp. 377 - 382
Main Author 颜鑫 张霞 李军帅 吕晓龙 任晓敏 黄永清
Format Journal Article
LanguageEnglish
Published 01.07.2013
Subjects
AlGaAs
Aluminum gallium arsenides
Buffer layers
Gallium arsenide
Gallium arsenides
Heterostructures
Indium arsenides
Nanowires
Segments
Silicon substrates
Si衬底
Si（111）衬底
异质
砷化铟镓
砷化镓
纳米线
表征
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Summary:Vertical InAs/GaAs nanowire （NW） heterostructures with a straight InAs segment have been successfully fabricated on Si （111） substrate by using AlGaAs/GaAs buffer layers coupled with a composition grading InGaAs segment. Both the GaAs and InAs segments are not limited by the misfit strain induced critical diameter. The low growth rate of InAs NWs is attributed to the AlGaAs/GaAs buffer layers which dramatically decrease the adatom diffusion contribution to the InAs NW growth. The crystal structure of InAs NW can be tuned from zincblende to wurtzite by controlling its diameter as well as the length of GaAs NWs. This work helps to open up a road for the integration of high-quality III-V NW heterostructures with Si.
Bibliography:nanowire;Si;buffer layer;adatom diffusion
Yan Xin, Zhang Xia , Li Jun-Shuai, Lü Xiao-Long, Ren Xiao-Min,Huang Yong-Qing State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
Vertical InAs/GaAs nanowire （NW） heterostructures with a straight InAs segment have been successfully fabricated on Si （111） substrate by using AlGaAs/GaAs buffer layers coupled with a composition grading InGaAs segment. Both the GaAs and InAs segments are not limited by the misfit strain induced critical diameter. The low growth rate of InAs NWs is attributed to the AlGaAs/GaAs buffer layers which dramatically decrease the adatom diffusion contribution to the InAs NW growth. The crystal structure of InAs NW can be tuned from zincblende to wurtzite by controlling its diameter as well as the length of GaAs NWs. This work helps to open up a road for the integration of high-quality III-V NW heterostructures with Si.
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/7/076102