Improvement of carrier distribution in dual wavelength light-emitting diodes

The effect of different barriers between green and blue light regions in dual wavelength light emitting diodes was studied. Compared with a traditional sample, electroluminescence and photoluminescence spectra of the newly designed samples showed peak intensity improvements and smaller blue-shifts w...

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Published inJournal of semiconductors Vol. 34; no. 5; pp. 87 - 89
Main Author 司朝 魏同波 张宁 马骏 王军喜 李晋闽
Format Journal Article
LanguageEnglish
Published 01.05.2013
Subjects
Barriers
Indium
Injection current
Light-emitting diodes
Quantum wells
Semiconductors
Spectral emittance
Wavelengths
光致发光光谱
双波长
发光二极管
注入电流
电致发光
蓝色光
载流子分布
量子阱
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ISSN1674-4926
DOI10.1088/1674-4926/34/5/054008

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Summary:The effect of different barriers between green and blue light regions in dual wavelength light emitting diodes was studied. Compared with a traditional sample, electroluminescence and photoluminescence spectra of the newly designed samples showed peak intensity improvements and smaller blue-shifts with increasing injection current level, and the bottom quantum-wells light emitting is enhanced. All these phenomena can be ascribed to reduced barrier thickness and indium doping in the quantum-barrier influencing electric fields and more holes injecting into the bottom QWs.
Bibliography:The effect of different barriers between green and blue light regions in dual wavelength light emitting diodes was studied. Compared with a traditional sample, electroluminescence and photoluminescence spectra of the newly designed samples showed peak intensity improvements and smaller blue-shifts with increasing injection current level, and the bottom quantum-wells light emitting is enhanced. All these phenomena can be ascribed to reduced barrier thickness and indium doping in the quantum-barrier influencing electric fields and more holes injecting into the bottom QWs.
11-5781/TN
LED; dual wavelength; quantum barrier; holes injection; carrier distribution
Si Zhao, Wei Tongbo, Zhang Ning, Ma Jun, Wang Junxi, and Li Jinmin（ Research and Development Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China）
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/34/5/054008