A Wafer-Level Sn-Rich Au-Sn Bonding Technique and Its Application in Surface Plasmon Resonance Sensors

Sn-rich Au Sn solder bonding is systematically investigated. High shear strength （64 MPa） and good hermeticity （a leak rate lower than 1 × 10-7 torr.1/s） are obtained for Au-Sn solder with 54wt% Sn bonded at 310℃. The AuSn2 phase with the highest Vickers-hardness among the four stable intermetMlic c...

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Published inChinese physics letters Vol. 31; no. 5; pp. 118 - 121
Main Author 毛旭 吕兴东 魏伟伟 张喆 杨晋玲 祁志美 杨富华
Format Journal Article
LanguageEnglish
Published 01.05.2014
Subjects
Bonding
Bonding strength
Gold
Packages
Plasmons
Sensors
Solders
Tin
应用
微机电系统
晶圆
生物传感器
表面等离子体共振
表面等离子共振
键合技术
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Summary:Sn-rich Au Sn solder bonding is systematically investigated. High shear strength （64 MPa） and good hermeticity （a leak rate lower than 1 × 10-7 torr.1/s） are obtained for Au-Sn solder with 54wt% Sn bonded at 310℃. The AuSn2 phase with the highest Vickers-hardness among the four stable intermetMlic compounds of the Au Sn system makes a major contribution to the high bonding strength. This bonding technique has been successfully used to package the Surface Plasmon Resonance （SPR） sensors. The Sn-rieh Au-Sn solder bonding provides a reliable, low-cost, low-temperature and wafer-level hermetic packaging solution for the micro-electromechanical system devices and has potential applications in high-end biomedical sensors.
Bibliography:Sn-rich Au Sn solder bonding is systematically investigated. High shear strength （64 MPa） and good hermeticity （a leak rate lower than 1 × 10-7 torr.1/s） are obtained for Au-Sn solder with 54wt% Sn bonded at 310℃. The AuSn2 phase with the highest Vickers-hardness among the four stable intermetMlic compounds of the Au Sn system makes a major contribution to the high bonding strength. This bonding technique has been successfully used to package the Surface Plasmon Resonance （SPR） sensors. The Sn-rieh Au-Sn solder bonding provides a reliable, low-cost, low-temperature and wafer-level hermetic packaging solution for the micro-electromechanical system devices and has potential applications in high-end biomedical sensors.
MAO Xu, LV Xing-Dong, WEI Wei-Wei, ZHANG Zhe, YANG Jin-Ling, QI Zhi-Mei, YANG Fu-Hua（ 1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Institute of Electronics, Chinese Academy of Sciences, Beijing 100190 3State Key Laboratorv of Transducer Technology ,Shanghai 200050
11-1959/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/31/5/056803