Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns

Surface segregation is studied via the evolution of reflection high-energy electron diffraction （RHEED） patterns under different values of As4 BEP for InGaAs films. When the As4 BEP is set to be zero, the RHEED pattern keeps a 4x3/（nx3） structure with increasing temperature, and surface segregation...

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Published inChinese physics B Vol. 21; no. 4; pp. 428 - 431
Main Author 周勋 罗子江 郭祥 张毕禅 尚林涛 周清 邓朝勇 丁召
Format Journal Article
LanguageEnglish
Published 01.04.2012
Subjects
Climb
Delay
Desorption
Electron diffraction
Evolution
InGaAs薄膜
Reflection
RHEED
Segregations
Surface temperature
反射高能电子衍射
温度升高
演变
砷化铟镓
衍射图案
表面偏析
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/21/4/046103

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Summary:Surface segregation is studied via the evolution of reflection high-energy electron diffraction （RHEED） patterns under different values of As4 BEP for InGaAs films. When the As4 BEP is set to be zero, the RHEED pattern keeps a 4x3/（nx3） structure with increasing temperature, and surface segregation takes place until 470 ℃ The RHEED pattern develops into a metal-rich （4x2） structure as temperature increases to 495℃. The reason for this is that surface segregation makes the In inside the InGaAs film climb to its surface. With the temperature increasing up to 515℃, the RHEED pattern turns into a GaAs（2x4） structure due to In desorption. While the As4 BEP comes up to a specific value （1.33 x 10-4 Pa-1.33 x 10-3 Pa）, the surface temperature can delay the segregation and desorption. We find that As4 BEP has a big influence on surface desorption, while surface segregation is more strongly dependent on temperature than surface desorption.
Bibliography:reflection high-energy electron diffraction, InGaAs films, surface segregation, surface desorption
Zhou Xun, Luo Zi-Jiang, Guo Xiang, Zhang Bi-Chan, Shang Lin-Tao, Zhou Qing, Deng Chao-Yong, and Ding Zhao a） College of Science, Guizhou University, Guiyang 550025, China b） School of Physics and Electronics Science, Guizhou Normal University, Guiyang 550001, China c） School of Education Administration, Guizhou College of Finance arid Economics, Guiyang 550004, China
Surface segregation is studied via the evolution of reflection high-energy electron diffraction （RHEED） patterns under different values of As4 BEP for InGaAs films. When the As4 BEP is set to be zero, the RHEED pattern keeps a 4x3/（nx3） structure with increasing temperature, and surface segregation takes place until 470 ℃ The RHEED pattern develops into a metal-rich （4x2） structure as temperature increases to 495℃. The reason for this is that surface segregation makes the In inside the InGaAs film climb to its surface. With the temperature increasing up to 515℃, the RHEED pattern turns into a GaAs（2x4） structure due to In desorption. While the As4 BEP comes up to a specific value （1.33 x 10-4 Pa-1.33 x 10-3 Pa）, the surface temperature can delay the segregation and desorption. We find that As4 BEP has a big influence on surface desorption, while surface segregation is more strongly dependent on temperature than surface desorption.
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/4/046103