Heusler bulk materials as targets for pulsed laser deposition: growth and characterisation

This work concerns the preparation and characterisation of homogeneous bulk Co 2Mn (Si, Ge, Ga, Sn Sb 0.8Sn 0.2) to be used as targets for pulsed laser deposition of magnetic contacts for spintronic devices. The samples have been prepared by direct synthesis from elemental powders followed by vertic...

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Bibliographic Details
Published inJournal of crystal growth Vol. 275; no. 1; pp. e1787 - e1792
Main Authors Manea, A.S., Monnereau, O., Notonier, R., Guinneton, F., Logofatu, C., Tortet, L., Garnier, A., Mitrea, M., Negrila, C., Branford, W., Grigorescu, C.E.A.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.02.2005
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Summary:This work concerns the preparation and characterisation of homogeneous bulk Co 2Mn (Si, Ge, Ga, Sn Sb 0.8Sn 0.2) to be used as targets for pulsed laser deposition of magnetic contacts for spintronic devices. The samples have been prepared by direct synthesis from elemental powders followed by vertical gradient freeze. Characterisation of their structural properties and compositional homogeneity was performed by X-ray diffraction and energy-dispersive X-ray spectroscopy combined with scanning electron microscopy. The results show one-phase for the Heusler alloys. The Curie temperatures of the samples have been measured by both thermogravimetric analysis and differential scanning calorimetry and are in a good agreement with the previously published values. The saturation magnetisation values are close to the values for single crystals.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2004.11.213