Depth-dependent mosaic tilt and twist in GaN epilayer： An approximate evaluation
An approach based on depth-sensitive skew-angle x-ray diffraction （SAXRD） is presented for approximately evalu- ating the depth-dependent mosaic tilt and twist in wurtzite c-plane GaN epilayers. It is found that （103） plane and （101） plane, among the lattice planes not perpendicular to the sample su...
Saved in:
| Published in | Chinese physics B Vol. 23; no. 6; pp. 569 - 573 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.06.2014
|
| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/23/6/068102 |
Cover
| Abstract | An approach based on depth-sensitive skew-angle x-ray diffraction （SAXRD） is presented for approximately evalu- ating the depth-dependent mosaic tilt and twist in wurtzite c-plane GaN epilayers. It is found that （103） plane and （101） plane, among the lattice planes not perpendicular to the sample surface, are the best choices to measure the depth profiles of tilt and twist for a GaN epilayer with a thickness of less than 2 μm according to the diffraction geometry of SAXRD. As an illustration, the depth-sensitive （103）/（101） ω-scans of a 1.4-μm GaN film grown by metal-organic chemical vapor deposition on sapphire substrate are measured and analyzed to show the feasibility of this approach. |
|---|---|
| AbstractList | An approach based on depth-sensitive skew-angle x-ray diffraction (SAXRD) is presented for approximately evaluating the depth-dependent mosaic tilt and twist in wurtzite c-plane GaN epilayers. It is found that (103) plane and (101) plane, among the lattice planes not perpendicular to the sample surface, are the best choices to measure the depth profiles of tilt and twist for a GaN epilayer with a thickness of less than 2 mu m according to the diffraction geometry of SAXRD. As an illustration, the depth-sensitive (103)/(101) omega -scans of a 1.4- mu m GaN film grown by metal-organic chemical vapor deposition on sapphire substrate are measured and analyzed to show the feasibility of this approach. An approach based on depth-sensitive skew-angle x-ray diffraction （SAXRD） is presented for approximately evalu- ating the depth-dependent mosaic tilt and twist in wurtzite c-plane GaN epilayers. It is found that （103） plane and （101） plane, among the lattice planes not perpendicular to the sample surface, are the best choices to measure the depth profiles of tilt and twist for a GaN epilayer with a thickness of less than 2 μm according to the diffraction geometry of SAXRD. As an illustration, the depth-sensitive （103）/（101） ω-scans of a 1.4-μm GaN film grown by metal-organic chemical vapor deposition on sapphire substrate are measured and analyzed to show the feasibility of this approach. |
| Author | 张金风 聂玉虎 周勇波 田坤 哈微 肖明 张进成 郝跃 |
| AuthorAffiliation | School of Microelectronics, Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi＇an 710071, China |
| Author_xml | – sequence: 1 fullname: 张金风 聂玉虎 周勇波 田坤 哈微 肖明 张进成 郝跃 |
| BookMark | eNqFkE1OwzAQRi0EEqVwBCSzYxM6tmPHFauKn4KEQEKwtowzAaPUSWMX6FU4C3fiCqQUsWDDajbvm_nm7ZDN0AQkZJ_BEQOtR0wVecZAqhEXIzUCpRnwDTLgIHUmtMg3yeCX2SY7MT4DqJ4RA3J7im16ykpsMZQYEp010XpHk68TtaGk6dXHRH2gU3tNsfW1XWL3-fFOJ4Hatu2aNz-zCSm-2Hphk2_CLtmqbB1x72cOyf352d3JRXZ1M708mVxlTjCeMlWizMfaFrLKbfXAVO6UElCMHSscPlisJJO51YyrcqxZCRocAC-hAl4xgWJIDtd7-xLzBcZkZj46rGsbsFlEwwrFQY1B8h6Va9R1TYwdVqbt-trd0jAwK4dm5ces_BgujDJrh33u-E_O-fT9ZOqsr_9NH_ykn5rwOPfh8fds_zhI2TNfFMWE4A |
| CitedBy_id | crossref_primary_10_1063_5_0015419 crossref_primary_10_7498_aps_64_127305 crossref_primary_10_1088_1674_1056_24_11_118101 |
| Cites_doi | 10.7567/JJAP.52.01AF01 10.1088/0256-307X/24/6/069 10.1088/1674-1056/21/12/126804 10.1063/1.1704870 10.1063/1.108841 10.1063/1.1315615 10.1016/j.jcrysgro.2013.07.035 10.1063/1.1849836 10.1088/0034-4885/72/3/036502 10.1016/j.jcrysgro.2013.10.036 10.1088/1674-1056/18/11/059 10.1557/PROC-138-539 10.1088/1674-1056/18/12/054 10.1063/1.2736207 10.1063/1.366235 10.1088/1674-1056/19/5/057203 10.1063/1.4829062 10.1016/j.jcrysgro.2013.09.041 10.1063/1.1812361 |
| ContentType | Journal Article |
| DBID | 2RA 92L CQIGP ~WA AAYXX CITATION 7QQ 7SR 7U5 8FD H8D JG9 L7M |
| DOI | 10.1088/1674-1056/23/6/068102 |
| DatabaseName | 维普期刊资源整合服务平台 中文科技期刊数据库-CALIS站点 中文科技期刊数据库-7.0平台 中文科技期刊数据库- 镜像站点 CrossRef Ceramic Abstracts Engineered Materials Abstracts Solid State and Superconductivity Abstracts Technology Research Database Aerospace Database Materials Research Database Advanced Technologies Database with Aerospace |
| DatabaseTitle | CrossRef Materials Research Database Aerospace Database Engineered Materials Abstracts Technology Research Database Solid State and Superconductivity Abstracts Ceramic Abstracts Advanced Technologies Database with Aerospace |
| DatabaseTitleList | Materials Research Database |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Physics |
| DocumentTitleAlternate | Depth-dependent mosaic tilt and twist in GaN epilayer： An approximate evaluation |
| EISSN | 2058-3834 1741-4199 |
| EndPage | 573 |
| ExternalDocumentID | 10_1088_1674_1056_23_6_068102 49805502 |
| GroupedDBID | 02O 1JI 1WK 29B 2RA 4.4 5B3 5GY 5VR 5VS 5ZH 6J9 7.M 7.Q 92L AAGCD AAJIO AAJKP AALHV AATNI ABHWH ABJNI ABQJV ACAFW ACGFS ACHIP AEFHF AENEX AFUIB AFYNE AHSEE AKPSB ALMA_UNASSIGNED_HOLDINGS ASPBG ATQHT AVWKF AZFZN BBWZM CCEZO CCVFK CEBXE CHBEP CJUJL CQIGP CRLBU CS3 DU5 EBS EDWGO EJD EMSAF EPQRW EQZZN FA0 FEDTE HAK HVGLF IJHAN IOP IZVLO JCGBZ KNG KOT M45 N5L NT- NT. PJBAE Q02 RIN RNS ROL RPA RW3 SY9 TCJ TGP UCJ W28 ~WA -SA -S~ AAYXX ACARI ADEQX AERVB AGQPQ AOAED ARNYC CAJEA CITATION Q-- U1G U5K 7QQ 7SR 7U5 8FD AEINN H8D JG9 L7M |
| ID | FETCH-LOGICAL-c312t-6de5498a75f4afb164c663079c17cebaef5154a8126d981d080c002d0f02f13e3 |
| ISSN | 1674-1056 |
| IngestDate | Fri Sep 05 08:01:50 EDT 2025 Thu Apr 24 22:50:05 EDT 2025 Tue Jul 01 02:55:06 EDT 2025 Wed Feb 14 10:36:47 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 6 |
| Language | English |
| License | http://iopscience.iop.org/info/page/text-and-data-mining http://iopscience.iop.org/page/copyright |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c312t-6de5498a75f4afb164c663079c17cebaef5154a8126d981d080c002d0f02f13e3 |
| Notes | ZhangJin-Feng, Nie Yu-Hu, Zhou Yong-Bo, Tian Kun, Ha Wei, Xiao Ming, Zhang Jin-Cheng, Hao Yue（ School of Microelectronics, Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi＇an 710071, China） mosaic structure, tilt and twist, skew angle x-ray diffraction, GaN An approach based on depth-sensitive skew-angle x-ray diffraction （SAXRD） is presented for approximately evalu- ating the depth-dependent mosaic tilt and twist in wurtzite c-plane GaN epilayers. It is found that （103） plane and （101） plane, among the lattice planes not perpendicular to the sample surface, are the best choices to measure the depth profiles of tilt and twist for a GaN epilayer with a thickness of less than 2 μm according to the diffraction geometry of SAXRD. As an illustration, the depth-sensitive （103）/（101） ω-scans of a 1.4-μm GaN film grown by metal-organic chemical vapor deposition on sapphire substrate are measured and analyzed to show the feasibility of this approach. 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
| PQID | 1762069052 |
| PQPubID | 23500 |
| PageCount | 5 |
| ParticipantIDs | proquest_miscellaneous_1762069052 crossref_primary_10_1088_1674_1056_23_6_068102 crossref_citationtrail_10_1088_1674_1056_23_6_068102 chongqing_primary_49805502 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2014-06-01 |
| PublicationDateYYYYMMDD | 2014-06-01 |
| PublicationDate_xml | – month: 06 year: 2014 text: 2014-06-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationTitle | Chinese physics B |
| PublicationTitleAlternate | Chinese Physics |
| PublicationYear | 2014 |
| References | 12 23 24 14 15 16 Suihkonen S (6) 2013; 52 17 18 Lin Z Y (3) 2012; 21 Otoki Y (11) 2013 Norman C E (22) 1999; 216 Xu Z J (2) 2007 Moram M A (1) 2009; 72 5 Wang M J (10) 2007; 24 7 8 Gao Z Y (9) 2009; 18 Xu Z H (19) 2009; 18 Lyons M H (13) 1985 Xue J S (4) 2010; 19 McAleese C (20) 2004; 272 21 |
| References_xml | – volume: 216 start-page: 375 year: 1999 ident: 22 – volume: 52 start-page: 01AF01 issn: 1347-4065 year: 2013 ident: 6 publication-title: Jpn. J. Appl. Phys. doi: 10.7567/JJAP.52.01AF01 – volume: 24 start-page: 1682 issn: 0256-307X year: 2007 ident: 10 publication-title: Chin. Phys. Lett. doi: 10.1088/0256-307X/24/6/069 – volume: 21 start-page: 126804 issn: 1674-1056 year: 2012 ident: 3 publication-title: Chin. Phys. doi: 10.1088/1674-1056/21/12/126804 – ident: 16 doi: 10.1063/1.1704870 – start-page: 109 year: 2013 ident: 11 – ident: 15 doi: 10.1063/1.108841 – ident: 23 doi: 10.1063/1.1315615 – ident: 5 doi: 10.1016/j.jcrysgro.2013.07.035 – ident: 18 doi: 10.1063/1.1849836 – volume: 72 start-page: 036502 issn: 0034-4885 year: 2009 ident: 1 publication-title: Rep. Prog. Phys. doi: 10.1088/0034-4885/72/3/036502 – ident: 8 doi: 10.1016/j.jcrysgro.2013.10.036 – start-page: 160 year: 2007 ident: 2 publication-title: Semiconductor Characterization and Analysis – volume: 18 start-page: 4970 issn: 1674-1056 year: 2009 ident: 9 publication-title: Chin. Phys. doi: 10.1088/1674-1056/18/11/059 – ident: 14 doi: 10.1557/PROC-138-539 – volume: 272 start-page: 475 year: 2004 ident: 20 – volume: 18 start-page: 5457 issn: 1674-1056 year: 2009 ident: 19 publication-title: Chin. Phys. doi: 10.1088/1674-1056/18/12/054 – ident: 21 doi: 10.1063/1.2736207 – ident: 17 doi: 10.1063/1.366235 – volume: 19 start-page: 057203 issn: 1674-1056 year: 2010 ident: 4 publication-title: Chin. Phys. doi: 10.1088/1674-1056/19/5/057203 – ident: 12 doi: 10.1063/1.4829062 – ident: 7 doi: 10.1016/j.jcrysgro.2013.09.041 – start-page: 445 year: 1985 ident: 13 – ident: 24 doi: 10.1063/1.1812361 |
| SSID | ssj0061023 ssib054405859 ssib000804704 |
| Score | 1.9986616 |
| Snippet | An approach based on depth-sensitive skew-angle x-ray diffraction （SAXRD） is presented for approximately evalu- ating the depth-dependent mosaic tilt and twist... An approach based on depth-sensitive skew-angle x-ray diffraction (SAXRD) is presented for approximately evaluating the depth-dependent mosaic tilt and twist... |
| SourceID | proquest crossref chongqing |
| SourceType | Aggregation Database Enrichment Source Index Database Publisher |
| StartPage | 569 |
| SubjectTerms | Approximation Camber Diffraction Feasibility Gallium nitrides Mosaics Planes Tilt X-射线衍射 外延层 扭曲 氮化镓 蓝宝石衬底 评价 金属有机化学气相沉积 马赛克 |
| Title | Depth-dependent mosaic tilt and twist in GaN epilayer： An approximate evaluation |
| URI | http://lib.cqvip.com/qk/85823A/201406/49805502.html https://www.proquest.com/docview/1762069052 |
| Volume | 23 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3Nb9MwFLdgCIkL4lN0wGQkblXW1HHshNtgQBli9LBJcLIcx9kidUmhiUD89TzbcZJOEzAuUWXFL5Lfr8_vw-9nhF7SOOJ5EUpDhWhaclISSKaigEWSqDTNZG7vBvx0zBan9OhLPCq02-6SJttXv67sK_kfrcIY6NV0yV5Ds71QGIDfoF94gobh-U86PtTr5jzw99g204t6I0s1bcqVOzfe_AAlmozGe3k81etyJcHB7lKBlkz8ZwkOqx5Rfo99VXO1tt7oLvmxGe5n7pPMR2UVwIKcDcUNmx792gaLdni5bu1gXZ0Fr-s-U1C6zOvHthonHuZ0OCDV2UrGKVhxxwvujalrHu5AM7aMhveMXGmzwc6Z9IGXZlpUDJmErSv1s7aZsi_tYP25QltRTxJhhAkjTJBIMOHE3ES3COe2lv_h89Jv18xwV5io3H_ft3klyawfm5FoxmZOjCHhOIcl-wauxbYzs72XWwfl5B6620UW-MDB5D66oasH6PbSKe8hWl4CC3ZgwQYsGMCCLVhwWWEAC_ZgeYUPKjyCCh6g8gidvnt78mYRdNdpBCqakyZguY5pmkgeF1QWGcTJCtzNkKdqzpXOpC7At6USPD6WpxDGQCyhYL_MwyIkhUmWP0Y7VV3pJwiHtChYziF25XOaMSlllIDjSSWnlGldTNBuv0Zi7WhTBHw7hHiYTBD1iyZUR0Rv7kNZiT-qb4L2-2le5F8mvPAaEWAzTSFMVrpuN2IOHoBh6I7J7nWFPkV3hv_CM7TTfG_1c3BLm2zPwuo37KCBTQ |
| linkProvider | IOP Publishing |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Depth-dependent+mosaic+tilt+and+twist+in+GaN+epilayer%3A+An+approximate+evaluation&rft.jtitle=Chinese+physics+B&rft.au=Zhang%2C+Jin-Feng&rft.au=Nie%2C+Yu-Hu&rft.au=Zhou%2C+Yong-Bo&rft.au=Tian%2C+Kun&rft.date=2014-06-01&rft.issn=1674-1056&rft.volume=23&rft.issue=6&rft.spage=68102&rft_id=info:doi/10.1088%2F1674-1056%2F23%2F6%2F068102&rft.externalDBID=n%2Fa&rft.externalDocID=10_1088_1674_1056_23_6_068102 |
| thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F85823A%2F85823A.jpg |