Depth-dependent mosaic tilt and twist in GaN epilayer： An approximate evaluation

An approach based on depth-sensitive skew-angle x-ray diffraction （SAXRD） is presented for approximately evalu- ating the depth-dependent mosaic tilt and twist in wurtzite c-plane GaN epilayers. It is found that （103） plane and （101） plane, among the lattice planes not perpendicular to the sample su...

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Published inChinese physics B Vol. 23; no. 6; pp. 569 - 573
Main Author 张金风 聂玉虎 周勇波 田坤 哈微 肖明 张进成 郝跃
Format Journal Article
LanguageEnglish
Published 01.06.2014
Subjects
Approximation
Camber
Diffraction
Feasibility
Gallium nitrides
Mosaics
Planes
Tilt
X-射线衍射
外延层
扭曲
氮化镓
蓝宝石衬底
评价
金属有机化学气相沉积
马赛克
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/23/6/068102

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Summary:An approach based on depth-sensitive skew-angle x-ray diffraction （SAXRD） is presented for approximately evalu- ating the depth-dependent mosaic tilt and twist in wurtzite c-plane GaN epilayers. It is found that （103） plane and （101） plane, among the lattice planes not perpendicular to the sample surface, are the best choices to measure the depth profiles of tilt and twist for a GaN epilayer with a thickness of less than 2 μm according to the diffraction geometry of SAXRD. As an illustration, the depth-sensitive （103）/（101） ω-scans of a 1.4-μm GaN film grown by metal-organic chemical vapor deposition on sapphire substrate are measured and analyzed to show the feasibility of this approach.
Bibliography:ZhangJin-Feng, Nie Yu-Hu, Zhou Yong-Bo, Tian Kun, Ha Wei, Xiao Ming, Zhang Jin-Cheng, Hao Yue（ School of Microelectronics, Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi＇an 710071, China）
mosaic structure, tilt and twist, skew angle x-ray diffraction, GaN
An approach based on depth-sensitive skew-angle x-ray diffraction （SAXRD） is presented for approximately evalu- ating the depth-dependent mosaic tilt and twist in wurtzite c-plane GaN epilayers. It is found that （103） plane and （101） plane, among the lattice planes not perpendicular to the sample surface, are the best choices to measure the depth profiles of tilt and twist for a GaN epilayer with a thickness of less than 2 μm according to the diffraction geometry of SAXRD. As an illustration, the depth-sensitive （103）/（101） ω-scans of a 1.4-μm GaN film grown by metal-organic chemical vapor deposition on sapphire substrate are measured and analyzed to show the feasibility of this approach.
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/23/6/068102