Deep insights into interaction behaviour and material removal of β-SiC wafer in nanoscale polishing

• Published in: Tribology international Vol. 186; p. 108639
• Main Authors: Do, Tan-Tai, Fang, Te-Hua
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.08.2023
• Subjects: Molecular dynamics; Nano-polishing; Removal mechanism; Rolling; Surface quality; Molecular dynamics; Rolling; Removal mechanism; Surface quality; Nano-polishing
• ISSN: 0301-679X; 1879-2464
• DOI: 10.1016/j.triboint.2023.108639

Silicon carbide (β-SiC) polishing aims to maximize material removal rate and surface quality. Molecular dynamics (MD) simulations revealed β-SiC substrate removal methods with various movement mechanisms. The single and multi-asperities models show depths, abrasive sizes, polishing velocities, oscillation amplitude, and frequency. The vibration-coupled rolling motion removes the most atoms in both models, but the improvement in atom removal is most remarkable in the sliding motion. In all models, root-mean-square (RMS) was highest in an anti-clockwise rolling motion, while RMS improved most when increasing from one to three asperities. From single to multi-asperities, surface roughness improvement was lowest in rolling motion associated with vibration. Our findings on surface roughness and movement process in β-SiC materials' anti-friction and elimination capabilities provide new insights. •The larger the abrasive or polishing depth, the larger the deleted atoms, and the lower the asperity.•Rolling combined vibration achieves the highest number of atoms removed.•The MRR improvement is most remarkable in the sliding motion.•Sliding motion eliminates atoms in the multi-asperities model better than other motions.•Rolling in the counterclockwise direction has the highest RMS value.