Simulation of the sensitive region to SEGR in power MOSFETs

Single event gate rupture（SEGR） is a very important failure mode for power MOSFETs when used in aerospace applications,and the cell regions are widely considered to be the most sensitive to SEGR.However, experimental results show that SEGR can also happen in the gate bus regions.In this paper,we use...

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Bibliographic Details
Published inJournal of semiconductors Vol. 33; no. 5; pp. 66 - 69
Main Author 王立新 陆江 刘刚 王春林 腾瑞 韩郑生 夏洋
Format Journal Article
LanguageEnglish
Published 01.05.2012
Subjects
Aircraft components
Estimates
Failure modes
Gates
MOSFETs
Proposals
Semiconductors
Simulation
三层结构
仿真工具
功率MOSFET
失效模式
敏感区
模拟
细胞
航天应用
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Summary:Single event gate rupture（SEGR） is a very important failure mode for power MOSFETs when used in aerospace applications,and the cell regions are widely considered to be the most sensitive to SEGR.However, experimental results show that SEGR can also happen in the gate bus regions.In this paper,we used simulation tools to estimate three structures in power MOSFETs,and found that if certain conditions are met,areas other than cell regions can become sensitive to SEGR.Finally,some proposals are given as to how to reduce SEGR in different regions.
Bibliography:single event gate rupture SEGR heavy ion power MOSFET
Single event gate rupture（SEGR） is a very important failure mode for power MOSFETs when used in aerospace applications,and the cell regions are widely considered to be the most sensitive to SEGR.However, experimental results show that SEGR can also happen in the gate bus regions.In this paper,we used simulation tools to estimate three structures in power MOSFETs,and found that if certain conditions are met,areas other than cell regions can become sensitive to SEGR.Finally,some proposals are given as to how to reduce SEGR in different regions.
11-5781/TN
Wang Lixin, Lu Jiang, Liu Gang, Wang Chunlin, Teng Rui, Han Zhengsheng, and Xia Yang（Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China）
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/33/5/054008