Magnetoresistance in nanocontacts formed in NiFe thin films

Magnetoresistance (MR) and current-driven conductance change measurements in NiFe nanocontacts in ion-beam-sputtered thin films at the initial growth stage were performed. A MR ratio of as large as about 140% with about 1 nm 2 contact whose conductance change was the same as that of current-driven m...

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Bibliographic Details
Published inJournal of applied physics Vol. 103; no. 7; pp. 07F302 - 07F302-3
Main Author Ohsawa, Yuichi
Format Journal Article
LanguageEnglish
Published United States American Institute of Physics 01.04.2008
Subjects
BINARY ALLOY SYSTEMS
CRYSTAL GROWTH
DEPOSITION
ION BEAMS
IRON ALLOYS
MAGNETORESISTANCE
MATERIALS SCIENCE
NANOSTRUCTURES
NICKEL ALLOYS
SPUTTERING
THIN FILMS
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Summary:Magnetoresistance (MR) and current-driven conductance change measurements in NiFe nanocontacts in ion-beam-sputtered thin films at the initial growth stage were performed. A MR ratio of as large as about 140% with about 1 nm 2 contact whose conductance change was the same as that of current-driven measurements was observed. Furthermore, as it aligned so well in the empirical fit of the contact size dependence to MR ratio based on the previous reports, it was deduced that domain wall plays an important role with respect to the large MR.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2828618