Optical coupling optimization in a novel metal-semiconductor-metal ultraviolet photodetector based on semicircular Schottky electrodes
A novel semicircular electrode metal-semiconductor-metal(SEMSM) ultraviolet detector is modeled, investigated and characterized with a self-consistent numerical calculation method.For the purpose of model and performance verification,a comprehensive comparison of the SEMSM detector and a conventiona...
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Published in | Journal of semiconductors Vol. 33; no. 5; pp. 74 - 79 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
01.05.2012
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Online Access | Get full text |
ISSN | 1674-4926 |
DOI | 10.1088/1674-4926/33/5/054010 |
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Abstract | A novel semicircular electrode metal-semiconductor-metal(SEMSM) ultraviolet detector is modeled, investigated and characterized with a self-consistent numerical calculation method.For the purpose of model and performance verification,a comprehensive comparison of the SEMSM detector and a conventional electrode MSM detector is carried out with experimental data.The results indicate that the physical models are able to predict the enhanced device features.Moreover,the structural parameters have been adjusted appropriately to optimize the SEMSM detector.The findings show that a device with a 2μm finger radius and 3 /mi spacing exhibits outstanding characteristics in terms of a peak responsivity of 0.177 A/W at 290 nm,a maximum external quantum efficiency of over 75%,and a comparable normalized photocurrent to dark current ratio of 1.192×10~(-1) W~(-1) at 0.3 V bias. These results demonstrate that the SEMSM detector has excellent performance for optoelectronic integrated circuit applications. |
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AbstractList | A novel semicircular electrode metal-semiconductor-metal(SEMSM) ultraviolet detector is modeled, investigated and characterized with a self-consistent numerical calculation method.For the purpose of model and performance verification,a comprehensive comparison of the SEMSM detector and a conventional electrode MSM detector is carried out with experimental data.The results indicate that the physical models are able to predict the enhanced device features.Moreover,the structural parameters have been adjusted appropriately to optimize the SEMSM detector.The findings show that a device with a 2μm finger radius and 3 /mi spacing exhibits outstanding characteristics in terms of a peak responsivity of 0.177 A/W at 290 nm,a maximum external quantum efficiency of over 75%,and a comparable normalized photocurrent to dark current ratio of 1.192×10~(-1) W~(-1) at 0.3 V bias. These results demonstrate that the SEMSM detector has excellent performance for optoelectronic integrated circuit applications. A novel semicircular electrode metal-semiconductor-metal (SEMSM) ultraviolet detector is modeled, investigated and characterized with a self-consistent numerical calculation method. For the purpose of model and performance verification, a comprehensive comparison of the SEMSM detector and a conventional electrode MSM detector is carried out with experimental data. The results indicate that the physical models are able to predict the enhanced device features. Moreover, the structural parameters have been adjusted appropriately to optimize the SEMSM detector. The findings show that a device with a 2 mu m finger radius and 3 mu m spacing exhibits outstanding characteristics in terms of a peak responsivity of 0.177 A/W at 290 nm, a maximum external quantum efficiency of over 75%, and a comparable normalized photocurrent to dark current ratio of 1.192 x 10 super(11) W super(-1) at 0.3 V bias. These results demonstrate that the SEMSM detector has excellent performance for optoelectronic integrated circuit applications. |
Author | 陈斌 杨银堂 柴常春 王宁 马振洋 谢宣蓉 |
AuthorAffiliation | Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University;No.771 Institute of Microelectronics Technology |
Author_xml | – sequence: 1 fullname: 陈斌 杨银堂 柴常春 王宁 马振洋 谢宣蓉 |
BookMark | eNqFkU1PXCEUhlloUmv9CU3ozs11DgOXgbhqTLVNTFy0XRO-Rkm5cAWuif0B_u4yM8aFm65O8p7nPSQPH9FRyskj9JnABQEhVoRv2MDkmq8oXY0rGBkQOEInb_kHdFZrMABSCMoATtDL3dyC1RHbvMwxpHucezCFv7qFnHBIWOOUn3zEk286DtVPwebkFttyGfYZXmIr-ink6BueH3LLzje_22Ojq3e439nXQrFL1AX_tB1qf56xjx0rHa-f0PFWx-rPXucp-n397dfV9-H27ubH1dfbwVKybgPnmlvHpTBks3FMUGpGCkJ62EpjBJXMWUeFXZvREgKUGcn5aIQBtwXhHT1F54e7c8mPi69NTaFaH6NOPi9VEUblhgOj0NHxgNqSay1-q-YSJl2eFQG10612WtVOq6JUjeqgu_cu3_VsaHub3VKI_21_eW0_5HT_2D_k7VlGJGVkDfQfqgGYZA |
CitedBy_id | crossref_primary_10_1007_s11434_012_5494_3 |
Cites_doi | 10.1007/s11433-008-0167-6 10.1109/JSEN.2007.913033 10.4028/www.scientific.net/MSF.389-393.679 10.4028/www.scientific.net/MSF.483-485.413 10.1088/1674-4926/32/7/074008 10.1149/1.2900102 10.1016/j.optcom.2010.11.065 10.1016/j.mssp.2008.11.001 10.1109/JSEN.2002.802240 10.1117/12.386781 10.1016/S0038-1101(02)00273-3 10.1088/1674-4926/30/6/063004 10.1063/1.120309 10.1007/978-3-662-03848-2 10.1063/1.368403 10.1109/LED.2006.871177 10.1017/CBO9781139164214 10.1088/0022-3727/40/20/S17 10.1088/1674-4926/31/6/064010 10.1063/1.2949318 |
ContentType | Journal Article |
DBID | 2RA 92L CQIGP W92 ~WA AAYXX CITATION 7SP 7U5 8FD L7M |
DOI | 10.1088/1674-4926/33/5/054010 |
DatabaseName | 维普_期刊 中文科技期刊数据库-CALIS站点 中文科技期刊数据库-7.0平台 中文科技期刊数据库-工程技术 中文科技期刊数据库- 镜像站点 CrossRef Electronics & Communications Abstracts Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
DatabaseTitle | CrossRef Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts |
DatabaseTitleList | Solid State and Superconductivity Abstracts |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering Physics |
DocumentTitleAlternate | Optical coupling optimization in a novel metal-semiconductor-metal ultraviolet photodetector based on semicircular Schottky electrodes |
EndPage | 79 |
ExternalDocumentID | 10_1088_1674_4926_33_5_054010 41934120 |
GroupedDBID | 02O 042 1WK 2B. 2C0 2RA 4.4 5B3 5VR 5VS 7.M 92H 92I 92L 92R 93N AAGCD AAJIO AALHV AATNI ABHWH ACAFW ACGFO ACGFS ACHIP AEFHF AFUIB AFYNE AHSEE AKPSB ALMA_UNASSIGNED_HOLDINGS ASPBG AVWKF AZFZN BBWZM CCEZO CEBXE CHBEP CJUJL CQIGP CRLBU CUBFJ CW9 EBS EDWGO EJD EQZZN FA0 IJHAN IOP IZVLO JCGBZ KNG KOT M45 N5L NS0 NT- NT. PJBAE Q02 RIN RNS ROL RPA RW3 SY9 TCJ TGT W28 W92 ~WA -SI -S~ 5XA 5XJ AAYXX ACARI AERVB AGQPQ AOAED ARNYC CAJEI CITATION Q-- TGMPQ U1G U5S 7SP 7U5 8FD AEINN L7M |
ID | FETCH-LOGICAL-c312t-66a6cd698b177d4833b53089e0f9bb8394dcd38c2b5c11034b9665b8b0df08ed3 |
ISSN | 1674-4926 |
IngestDate | Thu Sep 04 19:16:44 EDT 2025 Tue Jul 01 03:20:27 EDT 2025 Thu Apr 24 22:52:54 EDT 2025 Wed Feb 14 10:46:38 EST 2024 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 5 |
Language | English |
LinkModel | OpenURL |
MergedId | FETCHMERGED-LOGICAL-c312t-66a6cd698b177d4833b53089e0f9bb8394dcd38c2b5c11034b9665b8b0df08ed3 |
Notes | semicircular contact MSM ultraviolet photodetector optimization Chen Bin, Yang Yintang, Chai Changchun, Wang Ning, Ma Zhenyang, and Xie Xuanrong(1Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China 2No.771 Institute of Microelectronics Technology, Xi'an 710054, China) 11-5781/TN A novel semicircular electrode metal-semiconductor-metal(SEMSM) ultraviolet detector is modeled, investigated and characterized with a self-consistent numerical calculation method.For the purpose of model and performance verification,a comprehensive comparison of the SEMSM detector and a conventional electrode MSM detector is carried out with experimental data.The results indicate that the physical models are able to predict the enhanced device features.Moreover,the structural parameters have been adjusted appropriately to optimize the SEMSM detector.The findings show that a device with a 2μm finger radius and 3 /mi spacing exhibits outstanding characteristics in terms of a peak responsivity of 0.177 A/W at 290 nm,a maximum external quantum efficiency of over 75%,and a comparable normalized photocurrent to dark current ratio of 1.192×10~(-1) W~(-1) at 0.3 V bias. These results demonstrate that the SEMSM detector has excellent performance for optoelectronic integrated circuit applications. ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
PQID | 1439760430 |
PQPubID | 23500 |
PageCount | 6 |
ParticipantIDs | proquest_miscellaneous_1439760430 crossref_primary_10_1088_1674_4926_33_5_054010 crossref_citationtrail_10_1088_1674_4926_33_5_054010 chongqing_primary_41934120 |
ProviderPackageCode | CITATION AAYXX |
PublicationCentury | 2000 |
PublicationDate | 2012-05-01 |
PublicationDateYYYYMMDD | 2012-05-01 |
PublicationDate_xml | – month: 05 year: 2012 text: 2012-05-01 day: 01 |
PublicationDecade | 2010 |
PublicationTitle | Journal of semiconductors |
PublicationTitleAlternate | Chinese Journal of Semiconductors |
PublicationYear | 2012 |
References | Li Y Y (5) 2009; 30 11 22 Chen B (17) 2010; 31 23 Lü H M (12) 2006; 35 13 Su S C (6) 2011; 32 14 DESSIS-ISE (16) 15 Zou Z Y (4) 2008; 29 18 Yu Y P (19) 1999 Wright N G (3) 2007; 40 1 2 Seabra A C (9) 2000; 4089 7 8 Brennan K F (20) 1999 10 21 |
References_xml | – ident: 1 doi: 10.1007/s11433-008-0167-6 – ident: 2 doi: 10.1109/JSEN.2007.913033 – ident: 18 doi: 10.4028/www.scientific.net/MSF.389-393.679 – ident: 22 doi: 10.4028/www.scientific.net/MSF.483-485.413 – volume: 29 start-page: 20 year: 2008 ident: 4 publication-title: Journal of Semiconductors – volume: 32 start-page: 074008 year: 2011 ident: 6 publication-title: J. Semiconductors doi: 10.1088/1674-4926/32/7/074008 – ident: 7 doi: 10.1149/1.2900102 – ident: 8 doi: 10.1016/j.optcom.2010.11.065 – ident: 13 doi: 10.1016/j.mssp.2008.11.001 – ident: 15 doi: 10.1109/JSEN.2002.802240 – volume: 4089 start-page: 890 issn: 0277-786X year: 2000 ident: 9 publication-title: Proc SPIE Int Soc Opt Eng doi: 10.1117/12.386781 – volume: 35 start-page: 1052 issn: 1004-4213 year: 2006 ident: 12 publication-title: Acta Photonica Sin – ident: 11 doi: 10.1016/S0038-1101(02)00273-3 – volume: 30 start-page: 063004 year: 2009 ident: 5 publication-title: J. Semiconductors doi: 10.1088/1674-4926/30/6/063004 – ident: 21 doi: 10.1063/1.120309 – year: 1999 ident: 19 publication-title: Fundamentals of semiconductors: physics and materials properties. Chapter 4 doi: 10.1007/978-3-662-03848-2 – ident: 14 doi: 10.1063/1.368403 – ident: 23 doi: 10.1109/LED.2006.871177 – ident: 16 – year: 1999 ident: 20 publication-title: The physics of semiconductors with application to optoelectronic devices. Chapter 5 doi: 10.1017/CBO9781139164214 – volume: 40 start-page: 6345 issn: 0022-3727 year: 2007 ident: 3 publication-title: J. Phys doi: 10.1088/0022-3727/40/20/S17 – volume: 31 start-page: 064010 year: 2010 ident: 17 publication-title: J. Semiconductors doi: 10.1088/1674-4926/31/6/064010 – ident: 10 doi: 10.1063/1.2949318 |
SSID | ssib009883400 ssib051367712 ssib004869572 ssj0067441 ssib016971655 ssib022315920 ssib004377404 ssib017478542 |
Score | 1.8392961 |
Snippet | A novel semicircular electrode metal-semiconductor-metal(SEMSM) ultraviolet detector is modeled, investigated and characterized with a self-consistent... A novel semicircular electrode metal-semiconductor-metal (SEMSM) ultraviolet detector is modeled, investigated and characterized with a self-consistent... |
SourceID | proquest crossref chongqing |
SourceType | Aggregation Database Enrichment Source Index Database Publisher |
StartPage | 74 |
SubjectTerms | Detectors Devices Electrodes Mathematical models Photocurrent Photoelectric effect Semiconductors Ultraviolet 半圆形 半导体 基础 电极 紫外探测器 耦合优化 肖特基 金属结构 |
Title | Optical coupling optimization in a novel metal-semiconductor-metal ultraviolet photodetector based on semicircular Schottky electrodes |
URI | http://lib.cqvip.com/qk/94689X/201205/41934120.html https://www.proquest.com/docview/1439760430 |
Volume | 33 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Lb9QwELZKERIcEBQQLQ8ZCZ-idLOx49jH7HarggTl0Eq9RXGSpRUlWbZZJPoD-Iv8HWYcZ5MVb6Qocsb25DEee-yMvyHk5bwU8zDOhR8KlfvC5KVv4rnxYcYcFDrTRtuQLG_eyqNT8fosOtva-jbwWlo1Zj-__um-kv-RKtBArrhL9h8ku2YKBEiDfOEMEobzX8n4eNE4gI_Vwm4rr4Hw0e2sxJWMzKvqzyXuDwEb279CR_i6QoTXeulbmre6bJaZ_TvfeIvzuqmLsrEL-R6ObwX-S7DVLpatwyqidjbNhy-ei59TOB9EZ9-yWcTUAVMJJpJDNpmymWCTA6a5pRywRLKZxAJJ1AmbzTTTmimFORoyp55NQWFl8zibSFs9YCps84C1QNJE4YEUBRwhL2ZqxtTEFofE2EMOCRxTe98pPhUkoLaaQB5UD1gSuuIJRwrcrw041C2HoF9J53zoenAZCx9REIddfIu14ZpyNOiv2whBbuRvo9r8MKZAP4zLGx1fSOMi-KHF5AB713nlboJ2C7CLxTgMbpCbYRxb_4FXx-_6jpKD1T2YBwslQSd6O1MrxUWPmziWCPTVbyAeY9CDLnIxXIOJB1Zpb_dHiMMX9zhq8Og2hOv6HbqtbEqN1rQR56No1L4RAo2c19X7T9B0Nw22TXvFGmEn98hdN3uiSasK98nW9fkOuTPA1Nwht6xPc371gHx16kE79aBD9aAXFc2oVQ_6S_WgA_WgG-pBrXpQ4DNUD9qpB-3V4yE5PZydTI98F3bEz_k4bHwpM5kXUitEZiuE4txEPFC6DObaGJhQiCIvuMpDE-VgPHNhtJSRUSYo5oEqC_6IbFd1VT4mVGelgu8LZ5WJeQTdYRzxPA-5KKUMw3KX7K2_c7po4WXSru3sEtF9-DR3gP0YN-YytY4jSqUouxRll3KeRmkru12yv67WsfxDhRedVFMYW_CHYVaV9eoqHdvZCqIC7v3uQZ-Q270mPiXbzXJVPgNTvTHPbbP_Dg1TxoU |
linkProvider | IOP Publishing |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Optical+coupling+optimization+in+a+novel+metal-semiconductor-metal+ultraviolet+photodetector+based+on+semicircular+Schottky+electrodes&rft.jtitle=%E5%8D%8A%E5%AF%BC%E4%BD%93%E5%AD%A6%E6%8A%A5&rft.au=%E9%99%88%E6%96%8C+%E6%9D%A8%E9%93%B6%E5%A0%82+%E6%9F%B4%E5%B8%B8%E6%98%A5+%E7%8E%8B%E5%AE%81+%E9%A9%AC%E6%8C%AF%E6%B4%8B+%E8%B0%A2%E5%AE%A3%E8%93%89&rft.date=2012-05-01&rft.issn=1674-4926&rft.volume=33&rft.issue=5&rft.spage=74&rft.epage=79&rft_id=info:doi/10.1088%2F1674-4926%2F33%2F5%2F054010&rft.externalDocID=41934120 |
thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F94689X%2F94689X.jpg |