Optical coupling optimization in a novel metal-semiconductor-metal ultraviolet photodetector based on semicircular Schottky electrodes

A novel semicircular electrode metal-semiconductor-metal（SEMSM） ultraviolet detector is modeled, investigated and characterized with a self-consistent numerical calculation method.For the purpose of model and performance verification,a comprehensive comparison of the SEMSM detector and a conventiona...

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Bibliographic Details
Published inJournal of semiconductors Vol. 33; no. 5; pp. 74 - 79
Main Author 陈斌 杨银堂 柴常春 王宁 马振洋 谢宣蓉
Format Journal Article
LanguageEnglish
Published 01.05.2012
Subjects
Detectors
Devices
Electrodes
Mathematical models
Photocurrent
Photoelectric effect
Semiconductors
Ultraviolet
半圆形
半导体
基础
电极
紫外探测器
耦合优化
肖特基
金属结构
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ISSN1674-4926
DOI10.1088/1674-4926/33/5/054010

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Summary:A novel semicircular electrode metal-semiconductor-metal（SEMSM） ultraviolet detector is modeled, investigated and characterized with a self-consistent numerical calculation method.For the purpose of model and performance verification,a comprehensive comparison of the SEMSM detector and a conventional electrode MSM detector is carried out with experimental data.The results indicate that the physical models are able to predict the enhanced device features.Moreover,the structural parameters have been adjusted appropriately to optimize the SEMSM detector.The findings show that a device with a 2μm finger radius and 3 /mi spacing exhibits outstanding characteristics in terms of a peak responsivity of 0.177 A/W at 290 nm,a maximum external quantum efficiency of over 75%,and a comparable normalized photocurrent to dark current ratio of 1.192×10~（-1） W~（-1） at 0.3 V bias. These results demonstrate that the SEMSM detector has excellent performance for optoelectronic integrated circuit applications.
Bibliography:semicircular contact MSM ultraviolet photodetector optimization
Chen Bin, Yang Yintang, Chai Changchun, Wang Ning, Ma Zhenyang, and Xie Xuanrong（1Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi＇an 710071, China 2No.771 Institute of Microelectronics Technology, Xi＇an 710054, China）
11-5781/TN
A novel semicircular electrode metal-semiconductor-metal（SEMSM） ultraviolet detector is modeled, investigated and characterized with a self-consistent numerical calculation method.For the purpose of model and performance verification,a comprehensive comparison of the SEMSM detector and a conventional electrode MSM detector is carried out with experimental data.The results indicate that the physical models are able to predict the enhanced device features.Moreover,the structural parameters have been adjusted appropriately to optimize the SEMSM detector.The findings show that a device with a 2μm finger radius and 3 /mi spacing exhibits outstanding characteristics in terms of a peak responsivity of 0.177 A/W at 290 nm,a maximum external quantum efficiency of over 75%,and a comparable normalized photocurrent to dark current ratio of 1.192×10~（-1） W~（-1） at 0.3 V bias. These results demonstrate that the SEMSM detector has excellent performance for optoelectronic integrated circuit applications.
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ISSN:1674-4926
DOI:10.1088/1674-4926/33/5/054010