Effects of the p-AlInGaN/GaN superlattices＇ structure on the performance of blue LEDs

The advantages of the p-AIInGaN/GaN superlattices＇ （SLs） structure as an electron blocking layer （EBL） for InGaN blue light-emitting diodes （LEDs） were studied by experiment and APSYS simulation. Elec- troluminescence （EL） measurement results show that the LEDs with the p-AllnGaN/GaN SLs＇ structure...

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Published inJournal of semiconductors Vol. 35; no. 2; pp. 72 - 75
Main Author 刘娜 伊晓燕 梁萌 郭恩卿 冯向旭 司朝 姬小利 魏学成 路红喜 刘志强 张宁 王军喜 李晋闽
Format Journal Article
LanguageEnglish
Published 01.02.2014
Subjects
Blocking
Carrier transport
Electroluminescence
Gallium nitrides
Indium gallium nitrides
InGaN
Quantum wells
Semiconductors
Superlattices
多量子阱
性能影响
空穴浓度
结构
蓝光LED
蓝光发光二极管
超晶格
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Summary:The advantages of the p-AIInGaN/GaN superlattices＇ （SLs） structure as an electron blocking layer （EBL） for InGaN blue light-emitting diodes （LEDs） were studied by experiment and APSYS simulation. Elec- troluminescence （EL） measurement results show that the LEDs with the p-AllnGaN/GaN SLs＇ structure EBL ex- hibited better optical performance compared with the conventional A1GaN EBL due to the enhancement of hole concentration and hole carrier transport efficiency, and the confinement of electrons＇ overflow between multiple quantum-wells （MQWs） and EBL.
Bibliography:EBL; p-AllnGaN/GaN SLs; multiple quantum-wells
11-5781/TN
The advantages of the p-AIInGaN/GaN superlattices＇ （SLs） structure as an electron blocking layer （EBL） for InGaN blue light-emitting diodes （LEDs） were studied by experiment and APSYS simulation. Elec- troluminescence （EL） measurement results show that the LEDs with the p-AllnGaN/GaN SLs＇ structure EBL ex- hibited better optical performance compared with the conventional A1GaN EBL due to the enhancement of hole concentration and hole carrier transport efficiency, and the confinement of electrons＇ overflow between multiple quantum-wells （MQWs） and EBL.
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ISSN:1674-4926
DOI:10.1088/1674-4926/35/2/024010