Phase formation in the Pd-InP system

• Published in: Journal of applied physics Vol. 64; no. 10; pp. 4909 - 4913
• Main Authors: CARON-POPOWICH, R, WASHBURN, J, SANDS, T, KAPLAN, A. S
• Format: Journal Article
• Language: English
• Published: Woodbury, NY American Institute of Physics 15.11.1988
• Subjects: Analysing. Testing. Standards; Applied sciences; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Measurement of properties and materials state; Metals, semimetals and alloys; Metals. Metallurgy; Nondestructive testing; Physics; Solid surfaces and solid-solid interfaces; Specific materials; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Amorphous material; Annealing; Phosphides; Indium Phosphides; Electron diffraction; Temperature effect; Annealing temperature; Transition metal; Experimental study; Crystallography; X ray diffraction; Thin film; Transmission electron microscopy; Microstructure; Auger electron spectrometry; Interface
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.342440

The interaction of 40-nm Pd layers on chemically cleaned (100) InP substrates has been examined. The samples were isochronally annealed in an Ar-5%H2 ambient at temperatures from 175 to 650 °C. Transmission electron microscopy, x-ray diffraction, and Auger electron spectroscopy were used to study the phases that formed. The reaction began upon deposition. With subsequent annealing at 175 °C, an amorphous ternary phase of approximate composition Pd4.8InP0.7 was formed. For samples annealed at 215 and 250 °C, the tetragonal ternary phase, Pd5InP (a=0.3928 nm, c=0.6917 nm), was found. After higher-temperature annealing (45–650 °C), the simple cubic phase PdIn (a=0.326 nm), was observed.