A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel

A unified charge-based model for fully depleted silicon-on-insulator （SOI） metal oxide semiconductor field-effect transistors （MOSFETs） is presented. The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters. The framework starts from th...

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Bibliographic Details
Published inChinese physics B Vol. 21; no. 4; pp. 478 - 485
Main Author 张健 何进 周幸叶 张立宁 马玉涛 陈沁 张勖凯 杨张 王睿斐 韩雨 陈文新
Format Journal Article
LanguageEnglish
Published 01.04.2012
Subjects
Channels
Charge density
Depletion
Inversions
Mathematical analysis
Mathematical models
Metal oxide semiconductors
MOSFET
MOSFETs
Semiconductors
SOI
玻尔兹曼方程
电荷模型
绝缘体上硅
通道
重掺杂
金属氧化物半导体场效应晶体管
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Summary:A unified charge-based model for fully depleted silicon-on-insulator （SOI） metal oxide semiconductor field-effect transistors （MOSFETs） is presented. The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters. The framework starts from the one-dimensional Poisson Boltzmann equa- tion, and based on the full depletion approximation, an accurate inversion charge density equation is obtained. With the inversion charge density solution, the unified drain current expression is derived, and a unified terminal charge and intrinsic capacitance model is also derived in the quasi-static case. The validity and accuracy of the presented analytic model is proved by numerical simulations.
Bibliography:charge-based model, silicon-on-insulator metal-oxide semiconductor field-effect transis- tors, compact model, double gate
Zhang Jian, He Jin, Zhou Xing-Ye, Zhang Li-Ning Ua Yu-Tao, Chen Qin, Zhang Xu-Kai, Yang Zhang Wang Rui-Fe, HanYu, and Chart Mansun a） Tera-Scale Fteseareh Centre （TSRC）, School of Electronics Engineering and Computer Science （EECS）, Peking University, Beijing 100871, China b） Peking University Shenzhen System on Chip （SOC） Key Laboratory, PKU HKUST Shenzhen Hongkong Institution, W303 West Tower, IER Bldg, Hi-Tech Industrial Park South, Shenzhen 518057, China c） Department of Electronics and Computer Engineering （ECE）, Hong Kong University of Science and Technology, Kowloon, Clearwater Bay, Hong Kong, China
A unified charge-based model for fully depleted silicon-on-insulator （SOI） metal oxide semiconductor field-effect transistors （MOSFETs） is presented. The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters. The framework starts from the one-dimensional Poisson Boltzmann equa- tion, and based on the full depletion approximation, an accurate inversion charge density equation is obtained. With the inversion charge density solution, the unified drain current expression is derived, and a unified terminal charge and intrinsic capacitance model is also derived in the quasi-static case. The validity and accuracy of the presented analytic model is proved by numerical simulations.
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/4/047303