Displacement damage and single event effects of SiC diodes and MOSFETs by neutron, heavy ions and pulsed laser

• Published in: Microelectronics and reliability Vol. 139; p. 114791
• Main Authors: Shangguan, ShiPeng, Han, JianWei, Ma, YingQi, Wang, YingHao, Liu, PengCheng, Chen, Rui, Zhu, Xiang
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.12.2022
• Subjects: Displacement damage; Heavy ion; Neutron; Pulsed laser; SiC diodes and MOSFETs; Single event burnt-out; Heavy ion; Displacement damage; Pulsed laser; Single event burnt-out; Neutron; SiC diodes and MOSFETs
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2022.114791

SiC diodes and MOSFETs (device under test, DUTs) have been tested by neutron and heavy ions, pulsed laser separately or both. Neutron displacement damage (DD) results show that up to 1E12/cm2 neutrons there is no significant leakage current increasing; DUTs have been tested by heavy ion and pulsed laser to get their single event burnt-out (SEB) threshold at some working voltages, results show that pulsed laser and heavy ion are consistent with each other. Then one of the diodes and MOSFETs which has been tested by neutron was tested by pulsed laser to get SEB laser energy threshold, results show after neutron test SEB threshold laser energies will decrease obviously, with laser energy equivalence linear energy transfer (ELET) decrease much more. All the results mentioned above show that DD will distinctly affect SEB capabilities of SiC chips, DD will induce a leakage current path, which will decrease SEB threshold LET when SEE will also cause a leakage current path. Fig. 1 shows the experimental electric setup of test samples which is used for SEE experiments. The SBD is reverse biased. MOSFET is reversed biased between drain and source, to a voltage varied from 0 to 800 V; meanwhile, gate and source of MOSFET are both grounding. Current limit of the power supply is set to 20 mA which will prevent device being totally destroyed. 10 μF capacitance is parallelly connected and 1 kΩ resistance is serial connected to PN of SBD or drain and source of MOSFET. 34411A model digital multimeter of Keysight company is used to measure current transient. [Display omitted] •Different kinds of SiC diodes and MOSFETs tested by pulsed laser two photon absorption single event effects•A full relationship between pulsed laser two photon absorption effective energy square and heavy ion linear energy transfer•Pulsed laser two photon absorption used to test silicon carbon Schottky barrier diode after displacement damage test