High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes
Lateral Schottky barrier diodes （SBDs） on A1GaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increa...
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| Published in | Chinese physics letters Vol. 31; no. 6; pp. 237 - 240 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.06.2014
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0256-307X 1741-3540 |
| DOI | 10.1088/0256-307X/31/6/068502 |
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| Abstract | Lateral Schottky barrier diodes （SBDs） on A1GaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmie con- tact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20nA are achieved by the device with a Schottky contact diameter of 100 μm and a contact spacing of 40 μm, yielding a high V^2BR/ RoN,sp value of 194 MW.cm^-2. |
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| AbstractList | Lateral Schottky barrier diodes (SBDs) on AlGaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmic contact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20 nA are achieved by the device with a Schottky contact diameter of 100 mu m and a contact spacing of 40 mu m, yielding a high (ProQuest: Formulae and/or non-USASCII text omitted)/R sub(ON,sp) value of 194MW times cm super(-2). Lateral Schottky barrier diodes （SBDs） on A1GaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmie con- tact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20nA are achieved by the device with a Schottky contact diameter of 100 μm and a contact spacing of 40 μm, yielding a high V^2BR/ RoN,sp value of 194 MW.cm^-2. |
| Author | 康贺 王权 肖红领 王翠梅 姜丽娟 冯舂 陈竑 殷海波 王晓亮 王占国 侯洵 |
| AuthorAffiliation | Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Beijing 100083 ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, Beijing 100083 |
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| Cites_doi | 10.1063/1.123520 10.1109/LED.2009.2015897 10.7498/aps.57.3171 10.1016/S0038-1101(98)00245-7 10.1109/TED.2002.801290 10.1088/0256-307X/28/1/017303 10.1016/j.apsusc.2010.11.134 10.1088/1674-1056/18/4/054 10.1016/j.jcrysgro.2006.10.219 10.1002/0470068329 10.1063/1.1762980 10.1109/TED.2011.2146254 |
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| DocumentTitleAlternate | High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes |
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| Notes | Lateral Schottky barrier diodes （SBDs） on A1GaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmie con- tact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20nA are achieved by the device with a Schottky contact diameter of 100 μm and a contact spacing of 40 μm, yielding a high V^2BR/ RoN,sp value of 194 MW.cm^-2. KANG He, WANG Quan, XIAO Hong-Ling, WANG Cui-Mei, JIANG Li-Juan, FENG Chun, CHEN Hong, YIN Hai-Bo, WANG Xiao-Liang, WANG Zhan-Guo, HOU Xun（ 1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2 Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Beijing 100083 alSCAS-XJTU Joint Laboratory of Fhnctional Materials and Devices for Informatics, Beijing 100083） 11-1959/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | 11 12 13 15 Cao D S (7) 2011; 28 Lin D F (9) 2011; 55 1 2 3 Zhang J F (14) 2008; 57 4 Liu F (10) 2009; 18 Ishida H (6) 2008 8 Lee S C (5) 2005 |
| References_xml | – ident: 4 doi: 10.1063/1.123520 – ident: 11 doi: 10.1109/LED.2009.2015897 – volume: 57 start-page: 3171 issn: 0372-736X year: 2008 ident: 14 publication-title: Acta Phys. Sin. doi: 10.7498/aps.57.3171 – ident: 2 doi: 10.1016/S0038-1101(98)00245-7 – ident: 1 doi: 10.1109/TED.2002.801290 – start-page: 247 year: 2005 ident: 5 publication-title: Power Semiconductor Devices ICs – volume: 28 start-page: 017303 issn: 0256-307X year: 2011 ident: 7 publication-title: Chin. Phys. Lett. doi: 10.1088/0256-307X/28/1/017303 – ident: 12 doi: 10.1016/j.apsusc.2010.11.134 – volume: 18 start-page: 1614 issn: 1674-1056 year: 2009 ident: 10 publication-title: Chin. Phys. doi: 10.1088/1674-1056/18/4/054 – ident: 3 doi: 10.1016/j.jcrysgro.2006.10.219 – ident: 15 doi: 10.1002/0470068329 – ident: 8 doi: 10.1063/1.1762980 – start-page: 1 year: 2008 ident: 6 – ident: 13 doi: 10.1109/TED.2011.2146254 – volume: 55 start-page: 161103 year: 2011 ident: 9 publication-title: Eur. Phys. J.: Appl. Phys. |
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| Snippet | Lateral Schottky barrier diodes （SBDs） on A1GaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different... Lateral Schottky barrier diodes (SBDs) on AlGaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different... |
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| SubjectTerms | AlGaN Aluminum gallium nitrides Barriers Breakdown Contact Diodes Electric potential Texts Voltage 击穿电压 反向漏电流 导通电阻 欧姆接触 肖特基势垒二极管 肖特基接触 高电压 |
| Title | High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes |
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