High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes

Lateral Schottky barrier diodes （SBDs） on A1GaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increa...

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Published inChinese physics letters Vol. 31; no. 6; pp. 237 - 240
Main Author 康贺 王权 肖红领 王翠梅 姜丽娟 冯舂 陈竑 殷海波 王晓亮 王占国 侯洵
Format Journal Article
LanguageEnglish
Published 01.06.2014
Subjects
AlGaN
Aluminum gallium nitrides
Barriers
Breakdown
Contact
Diodes
Electric potential
Texts
Voltage
击穿电压
反向漏电流
导通电阻
欧姆接触
肖特基势垒二极管
肖特基接触
高电压
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/31/6/068502

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Summary:Lateral Schottky barrier diodes （SBDs） on A1GaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmie con- tact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20nA are achieved by the device with a Schottky contact diameter of 100 μm and a contact spacing of 40 μm, yielding a high V^2BR/ RoN,sp value of 194 MW.cm^-2.
Bibliography:Lateral Schottky barrier diodes （SBDs） on A1GaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmie con- tact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20nA are achieved by the device with a Schottky contact diameter of 100 μm and a contact spacing of 40 μm, yielding a high V^2BR/ RoN,sp value of 194 MW.cm^-2.
KANG He, WANG Quan, XIAO Hong-Ling, WANG Cui-Mei, JIANG Li-Juan, FENG Chun, CHEN Hong, YIN Hai-Bo, WANG Xiao-Liang, WANG Zhan-Guo, HOU Xun（ 1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2 Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Beijing 100083 alSCAS-XJTU Joint Laboratory of Fhnctional Materials and Devices for Informatics, Beijing 100083）
11-1959/O4
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/31/6/068502