Synthesis and characterization of non-oxide ceramic coatings on graphite substrates by solid–vapor reaction process

Silicon carbide (SiC) and silicon carbide/silicon nitride (SiC/Si 3N 4) were successfully synthesized on graphite substrates by the use of solid–vapor reaction (SVR) process. Layers of SiC and SiC/Si 3N 4 were synthesized on graphite substrate through the reaction between SiO and substrate the (SiO...

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Published inProgress in organic coatings Vol. 61; no. 2; pp. 291 - 299
Main Authors Kang, Ji-Hun, Cha, Hyun-Min, Lee, Je-Hyun, Jung, Yeon-Gil, Lee, Hee-Soo, Srivastava, V.K.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.02.2008
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Abstract Silicon carbide (SiC) and silicon carbide/silicon nitride (SiC/Si 3N 4) were successfully synthesized on graphite substrates by the use of solid–vapor reaction (SVR) process. Layers of SiC and SiC/Si 3N 4 were synthesized on graphite substrate through the reaction between SiO and substrate the (SiO (vapor) + 2C (from graphite)) and N 2 and substrate the (3SiO (vapor) + 2N 2 (vapor) + 3C (from graphite)), respectively. With the increase of dwell time and synthesis temperature the thickness of SiC layers increases up to 1500 °C temperature. Also, with the increase of synthesis temperature hardness value of SiC coatings is increased, which is 10–15 times higher than the substrate. The critical load of SiC coatings for wear resistance is about 22 N, which was observed by scratch tests. The synthesized SiC coatings appear to consist of a β-SiC phase mixed with a minor amount of an α-SiC phase, and its thickness is mainly affected by porosity of the substrate. The thickness of SiC/Si 3N 4 coatings is much thinner than that of SiC coatings, but gives higher value of surface hardness.
AbstractList Silicon carbide (SiC) and silicon carbide/silicon nitride (SiC/Si 3N 4) were successfully synthesized on graphite substrates by the use of solid–vapor reaction (SVR) process. Layers of SiC and SiC/Si 3N 4 were synthesized on graphite substrate through the reaction between SiO and substrate the (SiO (vapor) + 2C (from graphite)) and N 2 and substrate the (3SiO (vapor) + 2N 2 (vapor) + 3C (from graphite)), respectively. With the increase of dwell time and synthesis temperature the thickness of SiC layers increases up to 1500 °C temperature. Also, with the increase of synthesis temperature hardness value of SiC coatings is increased, which is 10–15 times higher than the substrate. The critical load of SiC coatings for wear resistance is about 22 N, which was observed by scratch tests. The synthesized SiC coatings appear to consist of a β-SiC phase mixed with a minor amount of an α-SiC phase, and its thickness is mainly affected by porosity of the substrate. The thickness of SiC/Si 3N 4 coatings is much thinner than that of SiC coatings, but gives higher value of surface hardness.
Author Jung, Yeon-Gil
Srivastava, V.K.
Lee, Je-Hyun
Cha, Hyun-Min
Lee, Hee-Soo
Kang, Ji-Hun
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  organization: Department of Mechanical Engineering, Institute of Technology, BHU, Varanasi 221005, India
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Keywords Solid–vapor reaction
Silicon carbide
Ceramic coating
Hardness
Graphite
Silicon nitride
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Snippet Silicon carbide (SiC) and silicon carbide/silicon nitride (SiC/Si 3N 4) were successfully synthesized on graphite substrates by the use of solid–vapor reaction...
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SubjectTerms Ceramic coating
Graphite
Hardness
Silicon carbide
Silicon nitride
Solid–vapor reaction
Title Synthesis and characterization of non-oxide ceramic coatings on graphite substrates by solid–vapor reaction process
URI https://dx.doi.org/10.1016/j.porgcoat.2007.09.033
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