Synthesis and characterization of non-oxide ceramic coatings on graphite substrates by solid–vapor reaction process

Silicon carbide (SiC) and silicon carbide/silicon nitride (SiC/Si 3N 4) were successfully synthesized on graphite substrates by the use of solid–vapor reaction (SVR) process. Layers of SiC and SiC/Si 3N 4 were synthesized on graphite substrate through the reaction between SiO and substrate the (SiO...

Full description

Saved in:
Bibliographic Details
Published inProgress in organic coatings Vol. 61; no. 2; pp. 291 - 299
Main Authors Kang, Ji-Hun, Cha, Hyun-Min, Lee, Je-Hyun, Jung, Yeon-Gil, Lee, Hee-Soo, Srivastava, V.K.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.02.2008
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Silicon carbide (SiC) and silicon carbide/silicon nitride (SiC/Si 3N 4) were successfully synthesized on graphite substrates by the use of solid–vapor reaction (SVR) process. Layers of SiC and SiC/Si 3N 4 were synthesized on graphite substrate through the reaction between SiO and substrate the (SiO (vapor) + 2C (from graphite)) and N 2 and substrate the (3SiO (vapor) + 2N 2 (vapor) + 3C (from graphite)), respectively. With the increase of dwell time and synthesis temperature the thickness of SiC layers increases up to 1500 °C temperature. Also, with the increase of synthesis temperature hardness value of SiC coatings is increased, which is 10–15 times higher than the substrate. The critical load of SiC coatings for wear resistance is about 22 N, which was observed by scratch tests. The synthesized SiC coatings appear to consist of a β-SiC phase mixed with a minor amount of an α-SiC phase, and its thickness is mainly affected by porosity of the substrate. The thickness of SiC/Si 3N 4 coatings is much thinner than that of SiC coatings, but gives higher value of surface hardness.
ISSN:0300-9440
1873-331X
DOI:10.1016/j.porgcoat.2007.09.033