Design and optimization of Ge profiles for improved thermal stability of SiGe HBTs

The impact of the three state-of-the-art germanium（Ge） profiles（box,trapezoid and triangular） across the base of SiGe heterojunction bipolar transistors（HBTs） under the condition of the same total amount of Ge on the temperature dependence of current gainβand cut-off frequency f_T,as well as the tem...

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Bibliographic Details
Published inJournal of semiconductors Vol. 34; no. 6; pp. 44 - 48
Main Author 付强 张万荣 金冬月 丁春宝 赵彦晓 张瑜洁
Format Journal Article
LanguageChinese
English
Published 01.06.2013
Subjects
Cut-off
Fingers
Gain
Germanium
HBT
Semiconductors
SiGe
Silicon germanides
Temperature profiles
Trapezoids
优化
异质结双极型晶体管
异质结双极晶体管
温度依赖性
热稳定性
设计
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Summary:The impact of the three state-of-the-art germanium（Ge） profiles（box,trapezoid and triangular） across the base of SiGe heterojunction bipolar transistors（HBTs） under the condition of the same total amount of Ge on the temperature dependence of current gainβand cut-off frequency f_T,as well as the temperature profile,are investigated.It can be found that although theβof HBT with a box Ge profile is larger than that of the others,it decreases the fastest as the temperature increases,while theβof HBT with a triangular Ge profile is smaller than that of the others,but decreases the slowest as the temperature increases.On the other hand,the f_T of HBT with a trapezoid Ge profile is larger than that of the others,but decreases the fastest as the temperature increases,and the f_T of HBT with a box Ge profile is smaller than that of the others,but decreases the slowest as temperature increases.Furthermore,the peak and surface temperature difference between the emitter fingers of the HBT with a triangular Ge profile is higher than that of the others.Based on these results,a novel segmented step box Ge profile is proposed,which has modestβand f_T,and trades off the temperature sensitivity of current gain and cut-off frequency,and the temperature profile of the device.
Bibliography:The impact of the three state-of-the-art germanium（Ge） profiles（box,trapezoid and triangular） across the base of SiGe heterojunction bipolar transistors（HBTs） under the condition of the same total amount of Ge on the temperature dependence of current gainβand cut-off frequency f_T,as well as the temperature profile,are investigated.It can be found that although theβof HBT with a box Ge profile is larger than that of the others,it decreases the fastest as the temperature increases,while theβof HBT with a triangular Ge profile is smaller than that of the others,but decreases the slowest as the temperature increases.On the other hand,the f_T of HBT with a trapezoid Ge profile is larger than that of the others,but decreases the fastest as the temperature increases,and the f_T of HBT with a box Ge profile is smaller than that of the others,but decreases the slowest as temperature increases.Furthermore,the peak and surface temperature difference between the emitter fingers of the HBT with a triangular Ge profile is higher than that of the others.Based on these results,a novel segmented step box Ge profile is proposed,which has modestβand f_T,and trades off the temperature sensitivity of current gain and cut-off frequency,and the temperature profile of the device.
11-5781/TN
SiGe heterojunction bipolar transistor; Ge profile; thermal stability; thermal characteristics
Fu Qiang,Zhang Wanrong,Jin Dongyue,Ding Chunbao, Zhao Yanxiao,Zhang Yujie（ 1 College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,China; 2 College of Physics,Liaoning University,Shenyang 110036,China ）
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/34/6/064001