Short-circuit robustness of retrograde channel doping 1.2 kV SiC MOSFETs

In this paper, the performance of 1.2-kV SiC power MOSFETs having a retrograde channel doping profile is compared to a conventional 1.2-kV SiC power MOSFET through TCAD simulations. The effect of several parameters such as channel length, channel doping profile and depth of the lightly doped channel...

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Bibliographic Details
Published inMicroelectronics and reliability Vol. 120; p. 114117
Main Authors Diaz Reigosa, Paula, Schulz, Nicola, Minamisawa, Renato
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.05.2021
Subjects
Reliability
Retrograde channel profile
Short-channel effects
Short-circuit
SiC MOSFETs
TCAD
Short-channel effects
SiC MOSFETs
Retrograde channel profile
Reliability
TCAD
Short-circuit
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Summary:In this paper, the performance of 1.2-kV SiC power MOSFETs having a retrograde channel doping profile is compared to a conventional 1.2-kV SiC power MOSFET through TCAD simulations. The effect of several parameters such as channel length, channel doping profile and depth of the lightly doped channel are investigated to demonstrate the benefits of the retrograde channel doping profile. With this concept, the short-circuit robustness of SiC MOSFETs can be improved and short-channel effects can be reduced. •Short-Channel Effects in vertical SiC power MOSFETs are presented.•Trade-off between on-state voltage and short circuit capability.•Advantages of regtrograde short channel devices: Supresses early breakdown, Minimizes short-channel effects, Better short circuit robustness.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2021.114117