Biased dielectric response in LuFe2O4

A complex permittivity at a low level of excitation signal was measured in ceramic LuFe2O4. A Debye-type relaxation response with a strong temperature dependence of a characteristic frequency was observed in accordance with earlier works. A small DC bias of about 10 V/cm led to unusual changes in th...

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Bibliographic Details
Published inPhysics letters. A Vol. 380; no. 46; pp. 3932 - 3935
Main Authors Kudasov, Yu.B., Markelova, M., Maslov, D.A., Platonov, V.V., Surdin, O.M., Kaul, A.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.12.2016
Subjects
Depleted layer
Dielectric response
Domain structure
Ferroelectricity
Multiferroics
Dielectric response
Ferroelectricity
Domain structure
Depleted layer
Multiferroics
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Summary:A complex permittivity at a low level of excitation signal was measured in ceramic LuFe2O4. A Debye-type relaxation response with a strong temperature dependence of a characteristic frequency was observed in accordance with earlier works. A small DC bias of about 10 V/cm led to unusual changes in the dielectric response. At frequencies, which were lower than the characteristic one, the conductivity drastically increased with slight decrease of the real part of the permittivity under the bias. In the opposite case of low frequencies, there are no traces of the DC bias effect. We show that an inhomogeneous charge distribution over surface layer (domain structure) is essential for describing the biased dielectric response in LuFe2O4. •LuFeO42 has drawn a substantial interest because of a novel mechanism of ferroelectricity.•In the present letter we have investigated an unusual biased response in this substance and proposed a model for its description.•We show an essential role of the domain structure of the surface layer in the dielectric response.
ISSN:0375-9601
1873-2429
DOI:10.1016/j.physleta.2016.09.054