Point defect determination by photoluminescence and capacitance-voltage characterization in a GaN terahertz Gunn diode

Photoluminescence （PL） measurement is used to study the point defect distribution in a GaN terahertz Gunn diode, which is able to the degrade high-field transport characteristic during further device operation. PL, secondary ion mass spectroscopy （SIMS）, transmission electron microscope （TEM）, and c...

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Bibliographic Details
Published inChinese physics B Vol. 22; no. 8; pp. 563 - 567
Main Author 李亮 杨林安 周小伟 张进成 郝跃
Format Journal Article
LanguageEnglish
Published 01.08.2013
Subjects
Density
Gallium nitrides
GaN
Gunn diodes
Luminescence
Origins
Photoluminescence
Point defects
Secondary ion mass spectroscopy
Transmission electron microscopy
光致发光
太赫兹
点缺陷
特性测定
电压
电容
耿氏二极管
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/8/087104

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Summary:Photoluminescence （PL） measurement is used to study the point defect distribution in a GaN terahertz Gunn diode, which is able to the degrade high-field transport characteristic during further device operation. PL, secondary ion mass spectroscopy （SIMS）, transmission electron microscope （TEM）, and capacitance-voltage （C-V） measurements are used to discuss the origin of point defects responsible for the yellow luminescence in structures. The point defect densities of about 1011 cm-2 in structures are extracted by analysis of C-V characterization. After thermal annealing treatment, diminishments of point defect densities in structures are efficiently demonstrated by PL and C-V results.
Bibliography:GaN terahertz Gunn diode, point defect, photoluminescence, capacitance-voltage
Li Liang, Yang Lin-An, Zhou Xiao-Wei, Zhang Jin-Cheng, and Hao Yue School of Microelectronics, Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi＂ an 710071, China
Photoluminescence （PL） measurement is used to study the point defect distribution in a GaN terahertz Gunn diode, which is able to the degrade high-field transport characteristic during further device operation. PL, secondary ion mass spectroscopy （SIMS）, transmission electron microscope （TEM）, and capacitance-voltage （C-V） measurements are used to discuss the origin of point defects responsible for the yellow luminescence in structures. The point defect densities of about 1011 cm-2 in structures are extracted by analysis of C-V characterization. After thermal annealing treatment, diminishments of point defect densities in structures are efficiently demonstrated by PL and C-V results.
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/8/087104