A self-heating study on multi-finger AlGaN/GaN high electron mobility transistors
Self-heating in multi-finger AlGaN/GaN high-electron-mobility transistors（HEMTs） is investigated by measurements and modeling of device junction temperature under steady-state operation.Measurements are carried out using micro-Raman scattering to obtain the detailed and accurate temperature distribu...
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| Published in | Journal of semiconductors Vol. 34; no. 7; pp. 74 - 78 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.07.2013
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/34/7/074005 |
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| Abstract | Self-heating in multi-finger AlGaN/GaN high-electron-mobility transistors（HEMTs） is investigated by measurements and modeling of device junction temperature under steady-state operation.Measurements are carried out using micro-Raman scattering to obtain the detailed and accurate temperature distribution of the device.The device peak temperature corresponds to the high field region at the drain side of gate edge.The channel temperature of the device is modeled using a combined electro-thermal model considering 2DEG transport characteristics and the Joule heating power distribution.The results reveal excellent correlation to the micro-Raman measurements, validating our model for the design of better cooled structures.Furthermore,the influence of layout design on the channel temperature of multi-finger AlGaN/GaN HEMTs is studied using the proposed electro-thermal model, allowing for device optimization. |
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| AbstractList | Self-heating in multi-finger AlGaN/GaN high-electron-mobility transistors (HEMTs) is investigated by measurements and modeling of device junction temperature under steady-state operation. Measurements are carried out using micro-Raman scattering to obtain the detailed and accurate temperature distribution of the device. The device peak temperature corresponds to the high field region at the drain side of gate edge. The channel temperature of the device is modeled using a combined electro-thermal model considering 2DEG transport characteristics and the Joule heating power distribution. The results reveal excellent correlation to the micro-Raman measurements, validating our model for the design of better cooled structures. Furthermore, the influence of layout design on the channel temperature of multi-finger AlGaN/GaN HEMTs is studied using the proposed electro-thermal model, allowing for device optimization. Self-heating in multi-finger AlGaN/GaN high-electron-mobility transistors（HEMTs） is investigated by measurements and modeling of device junction temperature under steady-state operation.Measurements are carried out using micro-Raman scattering to obtain the detailed and accurate temperature distribution of the device.The device peak temperature corresponds to the high field region at the drain side of gate edge.The channel temperature of the device is modeled using a combined electro-thermal model considering 2DEG transport characteristics and the Joule heating power distribution.The results reveal excellent correlation to the micro-Raman measurements, validating our model for the design of better cooled structures.Furthermore,the influence of layout design on the channel temperature of multi-finger AlGaN/GaN HEMTs is studied using the proposed electro-thermal model, allowing for device optimization. |
| Author | 杨丽媛 艾姗 陈永和 曹梦逸 张凯 马晓华 郝跃 |
| AuthorAffiliation | Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi＇an 710071, China School of Technical Physics, Xidian University, Xi＇an 710071, China |
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| CitedBy_id | crossref_primary_10_1016_j_mssp_2019_01_011 crossref_primary_10_1002_pssa_201431788 crossref_primary_10_1115_1_4043477 crossref_primary_10_1088_1361_6528_adafaf |
| Cites_doi | 10.1088/1674-1056/21/7/077304 10.1063/1.1308057 10.1088/1674-4926/31/2/024001 10.1109/55.974795 10.1109/TED.2006.883944 10.1109/LED.2004.830267 10.1109/55.658600 10.1088/1674-1056/20/11/117302 10.1063/1.106798 |
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| DocumentTitleAlternate | A self-heating study on multi-finger AlGaN/GaN high electron mobility transistors |
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| Notes | Self-heating in multi-finger AlGaN/GaN high-electron-mobility transistors（HEMTs） is investigated by measurements and modeling of device junction temperature under steady-state operation.Measurements are carried out using micro-Raman scattering to obtain the detailed and accurate temperature distribution of the device.The device peak temperature corresponds to the high field region at the drain side of gate edge.The channel temperature of the device is modeled using a combined electro-thermal model considering 2DEG transport characteristics and the Joule heating power distribution.The results reveal excellent correlation to the micro-Raman measurements, validating our model for the design of better cooled structures.Furthermore,the influence of layout design on the channel temperature of multi-finger AlGaN/GaN HEMTs is studied using the proposed electro-thermal model, allowing for device optimization. AlGaN/GaN high electron mobility transistors; electro-thermal simulation; Raman spectroscopy; channel temperature Yang Liyuan, Ai Shan, Chen Yonghe, Cao Mengyi, Zhang Kai, Ma Xiaohua and Hao Yue（1 Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi＇an 710071, China 2School of Technical Physics, Xidian University, Xi＇an 710071, China） 11-5781/TN ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
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| References | 1 Yang Liyuan (7) 2012; 21 2 5 Yang Liyuan (4) 2011; 20 6 8 9 Wang Dongfang (3) 2010; 31 |
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| Snippet | Self-heating in multi-finger AlGaN/GaN high-electron-mobility transistors（HEMTs） is investigated by measurements and modeling of device junction temperature... Self-heating in multi-finger AlGaN/GaN high-electron-mobility transistors (HEMTs) is investigated by measurements and modeling of device junction temperature... |
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| SubjectTerms | AlGaN Aluminum gallium nitrides Channels Devices Drains Gallium nitrides HEMT器件 High electron mobility transistors Semiconductor devices Semiconductors 手指 显微拉曼散射 温度分布 移动设备 自热 高电子迁移率晶体管 |
| Title | A self-heating study on multi-finger AlGaN/GaN high electron mobility transistors |
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