A self-heating study on multi-finger AlGaN/GaN high electron mobility transistors

Self-heating in multi-finger AlGaN/GaN high-electron-mobility transistors（HEMTs） is investigated by measurements and modeling of device junction temperature under steady-state operation.Measurements are carried out using micro-Raman scattering to obtain the detailed and accurate temperature distribu...

Full description

Saved in:
Bibliographic Details
Published inJournal of semiconductors Vol. 34; no. 7; pp. 74 - 78
Main Author 杨丽媛 艾姗 陈永和 曹梦逸 张凯 马晓华 郝跃
Format Journal Article
LanguageEnglish
Published 01.07.2013
Subjects
AlGaN
Aluminum gallium nitrides
Channels
Devices
Drains
Gallium nitrides
HEMT器件
High electron mobility transistors
Semiconductor devices
Semiconductors
手指
显微拉曼散射
温度分布
移动设备
自热
高电子迁移率晶体管
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/34/7/074005

Cover

More Information
Summary:Self-heating in multi-finger AlGaN/GaN high-electron-mobility transistors（HEMTs） is investigated by measurements and modeling of device junction temperature under steady-state operation.Measurements are carried out using micro-Raman scattering to obtain the detailed and accurate temperature distribution of the device.The device peak temperature corresponds to the high field region at the drain side of gate edge.The channel temperature of the device is modeled using a combined electro-thermal model considering 2DEG transport characteristics and the Joule heating power distribution.The results reveal excellent correlation to the micro-Raman measurements, validating our model for the design of better cooled structures.Furthermore,the influence of layout design on the channel temperature of multi-finger AlGaN/GaN HEMTs is studied using the proposed electro-thermal model, allowing for device optimization.
Bibliography:Self-heating in multi-finger AlGaN/GaN high-electron-mobility transistors（HEMTs） is investigated by measurements and modeling of device junction temperature under steady-state operation.Measurements are carried out using micro-Raman scattering to obtain the detailed and accurate temperature distribution of the device.The device peak temperature corresponds to the high field region at the drain side of gate edge.The channel temperature of the device is modeled using a combined electro-thermal model considering 2DEG transport characteristics and the Joule heating power distribution.The results reveal excellent correlation to the micro-Raman measurements, validating our model for the design of better cooled structures.Furthermore,the influence of layout design on the channel temperature of multi-finger AlGaN/GaN HEMTs is studied using the proposed electro-thermal model, allowing for device optimization.
AlGaN/GaN high electron mobility transistors; electro-thermal simulation; Raman spectroscopy; channel temperature
Yang Liyuan, Ai Shan, Chen Yonghe, Cao Mengyi, Zhang Kai, Ma Xiaohua and Hao Yue（1 Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi＇an 710071, China 2School of Technical Physics, Xidian University, Xi＇an 710071, China）
11-5781/TN
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/34/7/074005